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Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material 专利
专利号: US4365260, 申请日期: 1982-12-21, 公开日期: 1982-12-21
作者:  HOLONYAK, JR., NICK
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/24
EXPERIMENTAL TESTS OF HIGHER-ORDER QUANTUM ELECTRODYNAMICS AT SMALL DISTANCES 期刊论文
PHYSICAL REVIEW LETTERS, 1982, 卷号: 48, 期号: 11, 页码: #REF!
作者:  ADEVA, B;  BARBER, DP;  BECKER, U;  BEI, GD;  BERDUGO, J
收藏  |  浏览/下载:21/0  |  提交时间:2016/04/13
A THEORETICAL-ANALYSIS ON TRANSMISSION CHARACTERISTICS OF SEMICONDUCTOR-LASERS 期刊论文
ieee journal of quantum electronics, 1982, 卷号: 18, 期号: 4, 页码: 601-609
SHAN YZ; DU BX
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/15
SUPERHIGH DIFFERENTIAL QUANTUM EFFICIENCY AND STRONG SELF-SUSTAINED PULSATION IN CW DH LASER-DIODES 期刊论文
ieee journal of quantum electronics, 1982, 卷号: 18, 期号: 4, 页码: 595-601
WANG CM; ZHAO LQ; ZHUANG WR; CHANG JM; CHANG CS; WU ZQ
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/15


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