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Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field
期刊论文
Nanoscale Research Letters, 2019, 卷号: 14, 期号: 1
作者:
Li,Dabing
;
Feng,Zhe Chuan
;
Luo,Xuguang
;
Wang,Yong
;
Kai,Cuihong
收藏
  |  
浏览/下载:118/0
  |  
提交时间:2019/08/21
Refractive index
AlN
Threading dislocation density
Nanoscale strain field around dislocations
Kinematic and isotropic strain hardening in copper with highly aligned nanoscale twins
期刊论文
MATERIALS RESEARCH LETTERS, 2018, 卷号: 6, 期号: 6, 页码: 333-338
作者:
Wang, H
;
You, ZS
;
Lu, L
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  |  
浏览/下载:33/0
  |  
提交时间:2018/12/25
Nanotwins
back stress
kinematic hardening
strain rate effect
threading dislocations
Kinematic and isotropic strain hardening in copper with highly aligned nanoscale twins
期刊论文
MATERIALS RESEARCH LETTERS, 2018, 卷号: 6, 期号: 6, 页码: 333-338
作者:
Wang, Hao
;
You, Zesheng
;
Lu, Lei
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  |  
浏览/下载:27/0
  |  
提交时间:2021/02/02
Nanotwins
back stress
kinematic hardening
strain rate effect
threading dislocations
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition
期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728
作者:
Jiang, K.
;
Sun, X. J.
;
Ben, J. W.
;
Jia, Y. P.
;
Liu, H. N.
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  |  
浏览/下载:3/0
  |  
提交时间:2019/09/17
light-emitting-diodes
screw dislocations
threading dislocations
phase
epitaxy
gan
films
algan
core
edge
generation
Chemistry
Crystallography
The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD
期刊论文
Journal of Materials Chemistry C, 2018, 卷号: 6, 期号: 18, 页码: 4936-4942
作者:
Chen, Y. R.
;
Zhang, Z. W.
;
Jiang, H.
;
Li, Z. M.
;
Miao, G. Q.
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  |  
浏览/下载:0/0
  |  
提交时间:2019/09/17
threading dislocations
nucleation layer
gan
temperature
sapphire
Materials Science
Physics
Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates
期刊论文
THIN SOLID FILMS, 2015, 卷号: 593, 页码: 5
作者:
Li, KL(李奎龙)
;
Sun, YR(孙玉润)
;
Dong, JR(董建荣)
;
He, Y(何洋)
;
Zeng, XL(曾徐路)
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  |  
浏览/下载:14/0
  |  
提交时间:2015/12/31
Metamorphic GaInP buffers
Threading dislocations
X-ray diffraction
Strain relaxation
Dislocation annihilation
Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure
期刊论文
Applied Surface Science, 2015, 卷号: 356, 期号: 30, 页码: 1052-1057
作者:
Lin Ye
;
Miao Zhang
;
Zengfeng Di
;
Zhongyin Xue
;
Jianhong Yang
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  |  
浏览/下载:4/0
  |  
提交时间:2015/10/09
Defect density
Condensation
Defects
Dislocations (crystals)
Germanium
Hole mobility
Interfaces (materials)
Semiconductor insulator boundaries
Silicon alloys
Silicon wafers
Density of defects
Ge condensation
Ge on insulators
Low defect densities
SiGe-on-insulator structures
Threading dislocation
Threading dislocation densities
Wafer manufacturing
Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers
期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9
Sun, HH
;
Guo, FY
;
Li, DY
;
Wang, L
;
Zhao, DG
;
Zhao, LC
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  |  
浏览/下载:20/0
  |  
提交时间:2013/09/17
INCLINED THREADING DISLOCATIONS
INTERSUBBAND TRANSITIONS
RELAXATION
LAYERS
Fabrication of high quality SiGe virtual substrates by combining misfit strain and point defect techniques
期刊论文
2010, 2010
Liang Renrong
;
Wang Jing
;
Xu Jun
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  |  
浏览/下载:5/0
Computer simulation of the vacancy defects interaction with shuffle dislocation in silicon
期刊论文
2010, 2010
Li, Chengxiang
;
Meng, Qingyuan
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  |  
浏览/下载:4/0
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