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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Multicolor Tuning and Temperature-Triggered Anomalous Eu3+-Related Photoemission Enhancement via Interplay of Accelerated Energy Transfer and Release of Defect-Trapped Electrons in the Tb3+,Eu3+-Doped Strontium-Aluminum Chlorites 期刊论文 2018, 卷号: 10, 期号: 42, 页码: 36157-36170 作者:  Kang, Fengwen;  Sun, Guohuan;  Wang, Aiwu;  Xiao, Xufen;  Li, Yang Yang 收藏  |  浏览/下载：24/0  |  提交时间：2020/01/03 Sr3Al2O5Cl2:Tb3+  Eu3+  tunable emissions  energy transfer  temperature-triggered antiquenching luminescence  site preferential substitution  defect-trapped electrons   Temperature-Triggered Chiral Self-Assembly of Achiral Molecules at the Liquid-Solid Interface 期刊论文 ACS Applied Materials & Interfaces, 2016, 卷号: 8, 期号: 46, 页码: 32004-32010 作者:  Cheng, Linxiu;  Li, Yibao;  Zhang, Chun-Yu;  Gong, Zhong-Liang;  Fang, Qiaojun 收藏  |  浏览/下载：28/0  |  提交时间：2017/03/15 chiral self-assembly  temperature-triggered  scanning tunneling microscopy  flower-like structure  achiral molecules   A self-powered and thermally-responsive drug delivery system based on conducting polymers 期刊论文 2010 Ge, Dongtao; Qi, Rucai; Mu, Jing; Ru, Xiaoning; Hong, Shimin; Ji, Shan(Univ Western Cape, S African Inst Adv Mat Chem); Linkov, Vladimir(Univ Western Cape, S African Inst Adv Mat Chem); Shi, Wei; 石巍 收藏  |  浏览/下载：2/0  |  提交时间：2011/04/26 Polypyrrole  Drug delivery  Conducting polymers  Temperature-triggered   Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H. 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25 The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior  crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity  i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature  the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature  the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.