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清华大学 [7]

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	Design of suppressing optical and recombination losses in ultrathin CuInGaSe2 solar cells by Voronoi nanocavity arrays 会议论文作者: Wang, Yi-Chung; Chen, Chia-Wei; Su, Teng-Yu; Yang, Tzu-Yi; Liu, Wen-Wu 收藏 \| 浏览/下载：12/0 \| 提交时间：2020/12/18 Alumina Aluminum oxide Copper alloys Cost effectiveness Efficiency Electrodes Entertainment industry Film thickness Finite difference time domain method Gallium alloys Indium alloys Passivation Semiconductor alloys Thin films Time domain analysisCIGS solar cells Electrical performance High-efficiency Mass production Passivation layer Recombination loss Structural modeling Surface recombinations
	Design of suppressing optical and recombination losses in ultrathin CuInGaSe2 solar cells by Voronoi nanocavity arrays 期刊论文 Nano Energy, 2020, 卷号: 78 作者: Wang, Yi-Chung; Chen, Chia-Wei; Su, Teng-Yu; Yang, Tzu-Yi; Liu, Wen-Wu 收藏 \| 浏览/下载：6/0 \| 提交时间：2022/02/17 Alumina Aluminum oxide Copper alloys Cost effectiveness Efficiency Electrodes Entertainment industry Film thickness Finite difference time domain method Gallium alloys Indium alloys Passivation Semiconductor alloys Thin films Time domain analysis CIGS solar cells Electrical performance High-efficiency Mass production Passivation layer Recombination loss Structural modeling Surface recombinations
	Design of suppressing optical and recombination losses in ultrathin CuInGaSe2 solar cells by Voronoi nanocavity arrays 期刊论文 Nano Energy, 2020, 卷号: 78 作者: Wang, Yi-Chung; Chen, Chia-Wei; Su, Teng-Yu; Yang, Tzu-Yi; Liu, Wen-Wu 收藏 \| 浏览/下载：5/0 \| 提交时间：2020/11/14 Alumina Aluminum oxide Copper alloys Cost effectiveness Efficiency Electrodes Entertainment industry Film thickness Finite difference time domain method Gallium alloys Indium alloys Passivation Semiconductor alloys Thin films Time domain analysis CIGS solar cells Electrical performance High-efficiency Mass production Passivation layer Recombination loss Structural modeling Surface recombinations
	Novel photocatalytic performance of nanocage-like MIL-125-NH2 induced by adsorption of phenolic pollutants 期刊论文 ENVIRONMENTAL SCIENCE-NANO, 2020, 卷号: 7, 期号: 5, 页码: 1525-1538 作者: Shen, Yi; Zhu, Chao; Chen, Baoliang; Chen, Jianmeng; Fang, Qile 收藏 \| 浏览/下载：9/0 \| 提交时间：2020/12/16 METAL-ORGANIC FRAMEWORKS FENTON-LIKE CATALYSTS CARBON NANOTUBES FACILE SYNTHESIS GRAPHENE DEGRADATION TIO2 SURFACE NANOPARTICLES RECOMBINATION
	Impact of TID on latch up induced by pulsed irradiation in CMOS circuits 期刊论文 Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2019, 卷号: 440, 页码: 95-100 作者: Li, Ruibin; He, Chaohui; Chen, Wei; Li, Junlin; Wang, Chenhui 收藏 \| 浏览/下载：4/0 \| 提交时间：2019/11/19 Base recombination currents Dose rate Latch-ups Oxide trapped charge Pulsed irradiation Shallow trench isolation Surface recombinations Total Ionizing Dose
	An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect 期刊论文 IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802 作者: Jun Wang; Shiwei Liang; Linfeng Deng; Xin Yin; Z. John Shen 收藏 \| 浏览/下载：9/0 \| 提交时间：2019/12/13 Silicon carbide Predictive models Spontaneous emission Junctions SPICE Temperature Numerical models Bipolar junction transistor (BJT) proportional base driver SPICE model surface recombination effect 4H-SiC
	Self-assembly monolayers manipulate the power conversion processes in organic photovoltaics 期刊论文 JOURNAL OF POWER SOURCES, 2019, 卷号: Vol.409, 页码: 66-75 作者: Hu, Ting; Lv, Xiaolan; Cheng, Xiaofang; Huang, Liqiang; Zhang, Lifu 收藏 \| 浏览/下载：11/0 \| 提交时间：2019/12/13 Self-assembled monolayers Dipole moment Surface defect Dynamics process Bimolecular recombination Trap-based recombination
	An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect 期刊论文 IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802 作者: Wang, J; Liang, SW; Deng, LF; Yin, X; Shen, ZJ 收藏 \| 浏览/下载：2/0 \| 提交时间：2019/12/17 Bipolar junction transistor (BJT) proportional base driver SPICE model surface recombination effect 4H-SiC
	An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect. 期刊论文 IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802 作者: Wang, J; Liang, SW; Deng, LF; Yin, X; Shen, ZJ 收藏 \| 浏览/下载：4/0 \| 提交时间：2019/12/17 4H-SiC Bipolar junction transistor (BJT) Junctions Numerical models Predictive models proportional base driver Silicon carbide SPICE SPICE model Spontaneous emission surface recombination effect Temperature
	Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)(4) Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface 期刊论文 Acs Applied Materials & Interfaces, 2019, 卷号: 11, 期号: 35, 页码: 31851-31859 作者: Y.P.Song; B.Yao; Y.F.Li; Z.H.Ding; H.H.Sun 收藏 \| 浏览/下载：4/0 \| 提交时间：2020/08/24 Cu2ZnSn(S,Se)(4),solar cells,back surface field,p-MoSe2:Nb,carrier,recombination,shunt resistance,series resistance,recombination,resistance,monolayer,contact,mos2,bsf,Science & Technology - Other Topics,Materials Science

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