CORC

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CORC

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Catalyst-free growth of single crystalline beta-Ga2O3 microbelts on patterned sapphire substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2019, 卷号: 509, 页码: 91-95
作者:  Feng, Qiuju;  Li, Tongtong;  Li, Fang;  Li, Yunzheng;  Shi, Bo
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/02
Heteroepitaxial 3C-SiC on Si with flow-modulated carbonization process conditions 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2019, 卷号: Vol.506, 页码: 114-116
作者:  Li, Yun;  Zhao, Zhifei;  Yu, Le;  Wang, Yi;  Yin, Zhijun
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/17
Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers 期刊论文
Journal of Crystal Growth, 2019, 卷号: Vol.507, 页码: 143-145
作者:  Yingxi Niu;  Xiaoyan Tang;  Pengfei Wu;  Lingyi Kong;  Yun Li
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/13
Study of a new type nominal "washboard-like" triangular defects in 4H-SiC 4 degrees off-axis (0001) Si-face homoepitaxial layers 期刊论文
2019, 卷号: 506, 页码: 14-18
作者:  Hu, Jichao;  Jia, Renxu;  Niu, Yingxi;  Zang, Yuan;  Pu, Hongbin
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/20
The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: Vol.504, 页码: 37-40
作者:  Niu Yingxi;  Tang Xiaoyan;  Sang Ling;  Li Yun;  Kong Lingyi
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/26
The process and mechanism of the GaN nanoparticles formed by nitridation of beta-Ga2O3 crystal 期刊论文
MODERN PHYSICS LETTERS B, 2017, 卷号: 31, 期号: 10
作者:  Cui, Xiao-Jun;  Wang, Liang-Ling
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/12
The growth of Sea-urchin-like AlN nanostructures by modified CVD and their Field Emission properties 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 426, 期号: [db:dc_citation_issue], 页码: 49-53
作者:  Guo, Lu'an;  Chen, Guangde;  Zhu, Youzhang;  Duan, Xiangyang;  Ye, Honggang
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/02
Morphology evolution of MoS2 nanorods grown by chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 430
作者:  Han, Shuming;  Luo, Xingfang;  Cao, Yingjie;  Yuan, Cailei;  Yang, Yong
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/05
Ultrathin low temperature Si0.75Ge0.25/Si buffer layer for the growth of high quality Ge epilayer on Si (100) by RPCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 386, 页码: 38-42
作者:  Chen, D;  Wei, X;  Xue, ZY;  Bian, JT;  Wang, G
收藏  |  浏览/下载：3/0  |  提交时间：2015/05/25
Lattice-matching of Si grown on 6H-SiC(000-1) C-face 期刊论文
2014, 卷号: 385, 页码: 111-114
作者:  Li, L.B.;  Chen, Z.M.;  Xie, L.F.;  Yang, C.
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/20

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