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	Domain-wall induced giant tunneling electroresistance effect in two-dimensional Graphene/In2Se3 ferroelectric tunnel junctions 期刊论文 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2021, 卷号: 133 作者: Kang, Lili; Jiang, Peng; Zhang, Xiaoli; Hao, Hua; Zheng, Xiaohong 收藏 \| 浏览/下载：36/0 \| 提交时间：2021/08/31 Ferroelectric tunnel junctions Tunneling electroresistance effect Domain walls Quantum transport First principles
	Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands 期刊论文 Acta Materialia, 2020, 卷号: 187, 页码: 12-18 作者: Han, M.J.; Tang, Y.L.; Wang, Y.J.; Zhu, Y.L.; Ma, J.Y. 收藏 \| 浏览/下载：5/0 \| 提交时间：2020/11/14 Bismuth compounds Digital storage Heterojunctions High resolution transmission electron microscopy Iron compounds Scanning probe microscopy Switching Transmission electron microscopy Tunnel junctions Charged domain wall Conductive filaments Macroscopic and microscopic Nonvolatile memory devices Piezoresponse force microscopy Resistance switching behaviors Resistive switching behaviors Technological applications
	Electroresistance of Pt/BaTiO3/LaNiO3 ferroelectric tunnel junctions and its dependence on BaTiO3 thickness 期刊论文 MATERIALS RESEARCH EXPRESS, 2019, 卷号: 6 作者: Wang, Xi; Wu, Ming; Wei, Fansen; Zhang, Yiteng; Zheng, Chunyan 收藏 \| 浏览/下载：12/0 \| 提交时间：2019/11/19 ferroelectric memory pulsed laser deposition ferroelectric tunnel junctions resistive switching
	Memristive Synapses for Brain-Inspired Computing 期刊论文 ADVANCED MATERIALS TECHNOLOGIES, 2019, 卷号: 4, 期号: 3 作者: Wang, Jingrui; Zhuge, Fei 收藏 \| 浏览/下载：41/0 \| 提交时间：2019/12/18 RESISTIVE-SWITCHING MEMORY MAGNETIC TUNNEL-JUNCTIONS LONG-TERM POTENTIATION PHASE-CHANGE MEMORY RRAM DEVICES SYNAPTIC PLASTICITY CONDUCTANCE LINEARITY ELECTRONIC SYNAPSES IMPLEMENTATION SYSTEM
	Stability and Variability Emphasized STT-MRAM Sensing Circuit with Performance Enhancement 会议论文 2018 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2018, 2018-10-26 作者: Han, M.; Cai, H.; Yang, J.; Naviner, L.; Wang, Y. 收藏 \| 浏览/下载：11/0 \| 提交时间：2019/12/30 Convergence of numerical methods Magnetic anisotropy Magnetic recording Magnetic storage Magnetism Random access storage Timing circuits Tunnel junctions low Vdd performance Magnetic random access memory Magnetic tunnel junction Performance enhancements Perpendicular magnetic anisotropy Process Variation Sensing margin STT-MRAM MRAM devices
	Advanced nanoscale magnetic tunnel junctions for low power computing (Invited) 会议论文 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018 作者: Wang, Z.; Peng, S.; Wang, M.; Zhang, X.; Cai, W. 收藏 \| 浏览/下载：6/0 \| 提交时间：2019/12/30 Magnetic anisotropy Magnetic storage Nanomagnetics Torque Magnetic tunnel junction Perpendicular magnetic anisotropy Skyrmions Spin orbits Spin transfer torque Tunnel junctions
	A spin orbit torque based true random number generator with real-time optimization 会议论文 Proceedings of the IEEE Conference on Nanotechnology, 2018-07-23 作者: Liu, Y.; Wang, Z.; Li, Z.; Wang, X.; Zhao, W. 收藏 \| 浏览/下载：6/0 \| 提交时间：2019/12/30 Cryptography Magnetic devices Nanotechnology Number theory Sampling Stochastic systems Tunnel junctions Magnetic tunnel junction National Institute of Standards and Technology Optimization module Real-time optimization Spin transfer torque Statistical sampling Stochastic switching Transient simulation Random number generation
	Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM 会议论文 IEEE/IFIP International Conference on VLSI and System-on-Chip, VLSI-SoC, 2018-10-08 作者: Deng, E.; Wang, Z.; Kang, W.; Wei, S.; Zhao, W. 收藏 \| 浏览/下载：13/0 \| 提交时间：2019/12/30 CMOS integrated circuits Magnetic devices Magnetic recording NAND circuits Standby power systems Torque Tunnel junctions VLSI circuits Computing system Magnetic tunnel junction Non-volatile flip-flops Spin orbits Spin transfer torque Spintronics device Switching delay Switching power Flip flop circuits
	Emerging Spintronic Devices: From Ultra-High-Density Memory to Logic-In-Memory 会议论文 Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018, 2018-11-21 作者: Zhang, Yue; Wang, Guanda; Huang, Zhe; Zhang, Zhizhong; Wang, Jinkai 收藏 \| 浏览/下载：13/0 \| 提交时间：2019/12/30 CMOS integrated circuits Data storage equipment Magnetic devices Metals MOS devices Oxide semiconductors Semiconductor junctions Spintronics Tunnel junctions Complementary metal oxide semiconductors Logic applications Logic in memory Magnetic tunnel junction Non-volatile memory Spintronic device Systematic study Ultrahigh density Computer circuits
	Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 卷号: 51, 期号: 20, 页码: - 作者: Bai, Y; Wang, ZJ; Cui, JZ; Zhang, ZD; Wang, ZJ (reprint author), Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China. 收藏 \| 浏览/下载：17/0 \| 提交时间：2018/06/05 Metal/ferroelectric/semiconductor Tunnel-junctions Ferroelectric Thin-films Electroresistance Field

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