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长春光学精密机械与物... [2]
北京航空航天大学 [1]
华南理工大学 [1]
半导体研究所 [1]
合肥物质科学研究院 [1]
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期刊论文 [3]
会议论文 [2]
会议 [1]
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2022 [1]
2018 [1]
2007 [2]
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Guanidinium-assisted crystallization modulation and reduction of open-circuit voltage deficit for efficient planar FAPbBr3 perovskite solar cells
期刊论文
CHEMICAL ENGINEERING JOURNAL, 2022, 卷号: 437
作者:
Xu, Huifen
;
Liang, Zheng
;
Ye, Jiajiu
;
Xu, Shendong
;
Wang, Zihan
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2022/05/16
Wide-bandgap perovskites
Pure-bromide perovskite solar cells
Non-radiative recombination
Open-circuit voltage loss
Suppression of Recombination Energy Losses by Decreasing the Energetic Offsets in Perylene Diimide-Based Nonfullerene Organic Solar Cells
期刊论文
ACS ENERGY LETTERS, 2018, 卷号: 3, 页码: 2729-2735
作者:
Fu, Huiting
;
Wang, Yuming
;
Meng, Dong
;
Ma, Zetong
;
Li, Yan
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/30
Charge transfer
Electroluminescence
Energy dissipation
Organic solar cells
Photocurrents
Polycyclic aromatic hydrocarbons
Charge transfer state
Non-radiative recombinations
Photocurrent spectroscopy
Photovoltaic devices
Power conversion efficiencies
Radiative recombination
Recombination energy
Total energy loss
Solar cells
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE)
会议论文
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
He C.-F.
;
Qin L.
;
Li J.
;
Cheng L.-W.
;
Liang X.-M.
;
Ning Y.-Q.
;
Wang L.-J.
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  |  
浏览/下载:20/0
  |  
提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser
and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power
the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime
so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells
and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger
the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs
This three QWs structure can add the quantum state of QW
increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.
Rapid photoluminescence quenching in gainnas quantum wells at low temperature
期刊论文
Journal of luminescence, 2007, 卷号: 122, 页码: 188-190
作者:
Sun, Z.
;
Yang, X. D.
;
Sun, B. Q.
;
Ji, Y.
;
Zhang, S. Y.
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浏览/下载:18/0
  |  
提交时间:2019/05/12
Gainnas/gaas
Photoluminescence quenching
Non-radiative recombination
Preparation, characterization and optical properties of carbon doped ZnO nanocrystal (EI CONFERENCE)
会议论文
ICO20: Materials and Nanostructures, August 21, 2005 - August 26, 2005, Changchun, China
Wang Z.
;
Li S.
;
Lu Y.
;
Zhao D.
;
Liu J.
;
Wang L.
;
Zhang J.
;
Gao Y.
;
Wang Z.
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  |  
浏览/下载:18/0
  |  
提交时间:2013/03/25
In this paper
we prepared carbon doped nanocrystalline ZnO by pyrolyzed zinc stearate at 250C and 300C respectively. The XRD curves indicate the sample has polycrystalline hexagonal wurtzite structure. The XRD data of the sample prepared at 250C and 300C has a bigger angle shift about 0.05and 0.3respectively. That indicate the structure of the sample has some changes. The EDS indicate the sample contains Zn
O and C. So the XRD shift may attribute to the C. The XPS indicate the C doped in the crystal lattice of ZnO of the sample prepared at 300C
and the sample prepared at 250C may be only a few of C doped in the crystal lattice of ZnO. The PL of the sample prepared at 300C only has a weak ultraviolet emission
which indicates C modified the nanocrystalline ZnO surface as a non-radiative recombination center. In this process C could non-radiatively recombine the carries on the nanocrystallin ZnO surface. The sample prepared at 250C has a strong visible emission at about 530 nm. This emission band could be attributed to oxygen vacancy because C schlepped some oxygen on the nanocrystalline ZnO surface.
Aging Mathematical Model of InGaN/GaN LEDs based on Non-radiative Recombination (CPCI-S收录)
会议
作者:
Xu, Linwang[1]
;
Qian, Keyuan[1]
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  |  
浏览/下载:3/0
  |  
提交时间:2019/04/11
Light emitting diode (LED)
Arrhenius model
Non-radiative recombination defect
Aging model
Accelerated life test
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