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浏览/检索结果: 共3条，第1-3条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Light enhanced room temperature resistive NO2 sensor based on a gold-loaded organic-inorganic hybrid perovskite incorporating tin dioxide 期刊论文 MICROCHIMICA ACTA, 2019, 卷号: 186, 页码: 47 作者:  Chen, Yilu[1];  Zhang, Xinyu[2];  Liu, Zhifu[3];  Zeng, Zhigang[4];  Zhao, Hongbin[5] 收藏  |  浏览/下载：25/0  |  提交时间：2019/04/22 UV light  Light absorbing material  MASnI(3)  SnO2  P-n junction  SPR effect  Gas sensing  Heterojunction  Photo generated electrons  Catalytic effect   Light enhanced room temperature resistive NO2 sensor based on a gold-loaded organic-inorganic hybrid perovskite incorporating tin dioxide 期刊论文 MICROCHIMICA ACTA, 2019, 卷号: 186, 期号: 1 作者:  Chen, Yilu;  Zhang, Xinyu;  Liu, Zhifu;  Zeng, Zhigang;  Zhao, Hongbin 收藏  |  浏览/下载：26/0  |  提交时间：2019/12/26 UV light  Light absorbing material  MASnI(3)  SnO2  P-n junction  SPR effect  Gas sensing  Heterojunction  Photo generated electrons  Catalytic effect   The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China He C.-F.; Qin L.; Li J.; Cheng L.-W.; Liang X.-M.; Ning Y.-Q.; Wang L.-J. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.