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Spin-triplet pairing induced by near-neighbor attraction in the extended Hubbard model for cuprate chain
期刊论文
COMMUNICATIONS PHYSICS, 2022, 卷号: 5, 期号: 1, 页码: 257
作者:
Qu, Dai-Wei
;
Chen, Bin-Bin
;
Jiang, Hong-Chen
;
Wang, Yao
;
Li, Wei
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2023/01/16
PHASE-DIAGRAM
CORRELATION EXPONENTS
SPECTRAL PROPERTIES
4PF INSTABILITIES
2 DIMENSIONS
SUPERCONDUCTIVITY
SYMMETRIES
TRANSITION
CHARGE
SEPARATION
Development and verification of a model for generation of MSFR few-group homogenized cross-sections based on a Monte Carlo code OpenMC
期刊论文
Annals of Nuclear Energy, 2019, 卷号: 124, 页码: 187-197
作者:
Zhuang, Kun
;
Tang, Xiaobin
;
Cao, Liangzhi
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/11/19
Deterministic methods
Group parameters
MSFR
Neutronics
Neutronics parameters
OpenMC
Thermal neutron scattering
Two dimensions (2D)
PARTIAL EULER CHARACTERISTIC, NORMAL GENERATIONS AND THE STABLE D(2) PROBLEM
期刊论文
HOMOLOGY HOMOTOPY AND APPLICATIONS, 2018, 卷号: 20, 页码: 105-114
作者:
Ji, Feng
;
Ye, Shengkui
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
cohomological dimensions
D(2) problem
Quillen's plus construction
Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides
期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2018, 卷号: 6, 期号: 12, 页码: 3058-3064
作者:
Chun, Byong Sun
;
Xu, Hongjun
;
Hsu, Ming-Chien
;
Fuh, Huei-Ru
;
Feng, Jiafeng
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2018/12/04
Vanadium Disulfide Nanosheets
2-dimensional Electron-gas
Negative Magnetoresistance
Giant Magnetoresistance
Anderson Localization
Absence
Dimensions
Ferromagnetism
Diffusion
Graphene
Measuring dimensions of goods modules with 2D laser scanners on a conveyor belt
学位论文
: Umeå University, 2017
作者:
Strandberg,Filip
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  |  
浏览/下载:2/0
  |  
提交时间:2019/12/24
2D
laser
scanner
LMS100
dimensions
measuring
Raspberry
Pi
3
SDL
2D-laserskanner
LMS100
dimensionsmätning
Raspberry
Pi
3
SDL
Other
Electrical
Engineering
Electronic
Engineering
Information
Engineering
Annan
elektroteknik
och
elektronik
Direct observation of melting in a two-dimensional driven granular system
期刊论文
SCIENTIFIC REPORTS, 2016, 卷号: 6, 页码: 24056
作者:
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/04/08
BOND-ORIENTATIONAL ORDER
2 DIMENSIONS
TRANSITION
LATTICE
DISKS
GAS
Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film
期刊论文
NANOSCALE, 2016
Jing, Yumei
;
Huang, Shaoyun
;
Zhang, Kai
;
Wu, Jinxiong
;
Guo, Yunfan
;
Peng, Hailin
;
Liu, Zhongfan
;
Xu, H. Q.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
TOPOLOGICAL INSULATORS
2 DIMENSIONS
MAGNETORESISTANCE
SURFACE
NONEQUILIBRIUM
LOCALIZATION
Global well-posedness for magneto-micropolar system in [formula omitted] dimensions.
期刊论文
Applied Mathematics & Computation, 2016, 卷号: Vol.280, 页码: 72-85
作者:
Liu, Yujun
;
Li, Shan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/03/26
2
1
2
dimensions
35A01
35A02
49K40
76D03
Magneto-micropolar
fluid
Well-posedness
Super-spectral curve of irregular conformai blocks.
期刊论文
Journal of High Energy Physics, 2016, 卷号: Vol.2016 No.12, 页码: preceding 1-16
作者:
Dmitri Polyakov
;
Chaiho Rim
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/03/01
2D
Gravity
Field
Theories
in
Higher
Dimensions
Field
Theories
in
Lower
Dimensions
Supersymmetric
Effective
Theories
Micro-electro-mechanical systems capacitive ultrasonic transducer with a higher electromechanical coupling coefficient
期刊论文
Micro & Nano Letters, 2015, 卷号: 10, 期号: 10, 页码: 4
作者:
Miao, J(苗静)
;
Shen, WJ(沈文江)
;
He, CD
;
Xue, CY
;
Xiong, JJ
收藏
  |  
浏览/下载:80/0
  |  
提交时间:2015/12/31
silicon
elemental semiconductors
silicon-on-insulator
wafer bonding
electromechanical effects
ultrasonic transducers
capacitive transducers
micromechanical devices
micromachining
vibrations
membranes
finite element analysis
reliability
capacitance
electromechanical coupling coefficient
capacitive micromachined ultrasonic transducer
impedance matching
propagation medium
microelectromechanical system capacitive ultrasonic transducer
silicon on insulator
wafer bonding
optimum geometric dimensions
membrane mechanical vibration
electrical characteristics
finite-element analysis
operation mode
device safety
device reliability
equivalent stress
operation-collapse voltage
bottom electrodes
glass substrate surface
parallel parasitic capacitance
Si
SiO2
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