CORC

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Method to measure muon content of extensive air showers with LHAASO KM2A-WCDA synergy 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2024, 卷号: 1059
作者:  Cao, Zhen;  Aharonian, F.;  An, Q.;  Axikegu;  Bai, L.X.
收藏  |  浏览/下载:7/0  |  提交时间:2024/03/29
Status and Progress of the RF System for High Energy Photon Source 会议论文
Brazil, 2021
作者:  P. Zhang;  J. Dai;  Z.W. Deng;  L. Guo;  T.M. Huang
收藏  |  浏览/下载:30/0  |  提交时间:2022/01/18
Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125359
作者:  X.F. Liu;   G.G. Yan;   L. Sang;   Y.X. Niu;   Y.W. He;   Z.W. Shen;   Z.X. Wen;   J. Chen;   W.S. Zhao;   L. Wang;   M. Guan;   F. Zhang;   G.S. Sun;   Y.P. Zeng
收藏  |  浏览/下载:11/0  |  提交时间:2021/11/26
Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125362
作者:  G.G. Yan;   Y.W. He;   Z.W. Shen;   Y.X. Cui;   J.T. Li;   W.S. Zhao;   L. Wang;   X.F. Liu;   F. Zhang;   G.S. Sun;   Y.P. Zeng
收藏  |  浏览/下载:9/0  |  提交时间:2021/11/26
The US Electron Ion Collider Accelerator Designs 会议论文
Michigan, 2019
作者:  A. Seryi;  S.V. Benson;  S.A. Bogacz;  P.D. Brindza;  M.W. Bruker
收藏  |  浏览/下载:11/0  |  提交时间:2021/05/31
Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 283-287
作者:  X.F. Liu ;   G.G. Yan ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   Y.W. He ;   W.S. Zhao ;   L. Wang ;   M. Guan ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
收藏  |  浏览/下载:8/0  |  提交时间:2020/07/31
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers 期刊论文
Journal of Crystal Growth, 2019, 卷号: 55, 页码: 1-4
作者:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   X.H. Zhang ;   X.G. Li ;   G.S. Sun ;   Y.P. Zeng ;   Z.G. Wang
收藏  |  浏览/下载:3/0  |  提交时间:2020/08/04
The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 175-179
作者:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   W.S. Zhao ;   L. Wang ;   Y.X. Cui ;   J.T. Li ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
收藏  |  浏览/下载:4/0  |  提交时间:2020/07/31
The self-compensation effect of heavily Mg doped p-GaN films studied by SIMS and photoluminescence 期刊论文
Superlattices and Microstructures, 2019, 卷号: 133, 页码: 106177
作者:  H.R. Qi ;   S. Zhang ;   S.T. Liu ;   F. Liang ;   L.K. Yi ;   J.L. Huang ;   M. Zhou ;   Z.W. He ;   D.G. Zhao ;   D.S. Jiang
收藏  |  浏览/下载:7/0  |  提交时间:2020/07/31
Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 504, 页码: 7-12
作者:  X.F. Liu ;   G.G. Yan ;   B. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
收藏  |  浏览/下载:29/0  |  提交时间:2019/11/15


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