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浏览/检索结果: 共22条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Guidelines for the use and interpretation of assays for monitoring autophagy (3rd edition) 期刊论文 AUTOPHAGY, 2016, 卷号: 12, 期号: 1, 页码: 1-222 作者:  Klionsky, DJ;  Abdelmohsen, K;  Abe, A;  Abedin, MJ;  Abeliovich, H 收藏  |  浏览/下载：96/0  |  提交时间：2017/01/10 autolysosome  autophagosome  chaperone-mediated autophagy  flux  LC3  lysosome  macroautophagy  phagophore  stress  vacuole   Optimization Theory, Methods, and Applications in Engineering 2014 期刊论文 MATHEMATICAL PROBLEMS IN ENGINEERING, 2015 作者:  Tsai, Jung-Fa;  Carlsson, John Gunnar;  Ge, Dongdong;  Hu, Yi-Chung;  Shi, Jianming 收藏  |  浏览/下载：1/0  |  提交时间：2019/08/22 Optimization Theory, Methods, and Applications in Engineering 2013 期刊论文 MATHEMATICAL PROBLEMS IN ENGINEERING, 2014 作者:  Tsai, Jung-Fa;  Carlsson, John Gunnar;  Ge, Dongdong;  Hu, Yi-Chung;  Shi, Jianming 收藏  |  浏览/下载：1/0  |  提交时间：2019/08/22 Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor 期刊论文 应用物理学快报, 2014 Chen, Hsin-lu; Chang, Ting-Chang; Young, Tai-Fa; Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Huang, Sheng-Yao; Chen, Kai-Huang; Lou, J. C.; Chen, Min-Chen; Shih, Chih-Cheng; Huang, Syuan-Yong; Chen, Jung-Hui 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/11 RANDOM-ACCESS MEMORY  PASSIVATION  RRAM  TFT   Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory 期刊论文 ieee electron device letters, 2014 Shih, Chih-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Chen, Jung-Hui; Chen, Kai-Huang; Young, Tai-Fa; Chen, Hsin-Lu; Lou, Jen-Chung; Chu, Tian-Jian; Huang, Syuan-Yong; Bao, Ding-Hua; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 ZnO  RRAM  ultra-violet light  current conduction mechanism  IMPROVEMENT  DEVICES   Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory 期刊论文 ieee electron device letters, 2014 Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Huang, Syuan-Yong; Chen, Wen-Jen; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chen, Hsin-Lu; Liang, Shu-Ping; Syu, Yong-En; Sze, Simon M. 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10 Oxygen accumulation  indium tin oxide  Schottky emission  RRAM  RESISTIVE SWITCHING MEMORIES   Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory 期刊论文 ieee electron device letters, 2014 Chu, Tian-Jian; Tsai, Tsung-Ming; Chang, Ting-Chang; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Huang, Jen-Wei; Lou, Jen-Chung; Chen, Min-Chen; Huang, Syuan-Yong; Chen, Hsin-Lu; Syu, Yong-En; Bao, Dinghua; Sze, Simon M. 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/11 RRAM  hydrogen  resistive switching  tri-resistive states  HOPPING CONDUCTION  ORIGIN  RRAM   Hydrogen induced redox mechanism in amorphous carbon resistive random access memory 期刊论文 nanoscale research letters, 2014 Chen, Yi-Jiun; Chen, Hsin-Lu; Young, Tai-Fa; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Lou, Jen-Chung; Chu, Tian-Jian; Chen, Jung-Hui; Bao, Ding-Hua; Sze, Simon M. 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 Carbon  Hydrogen redox  Conjugation double bond  RRAM  CO2 FLUID TREATMENT  RRAM DEVICES  HOPPING CONDUCTION  SILICON  TRANSITION  ORIGIN  FILMS   Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment 期刊论文 journal of supercritical fluids, 2014 Chang, Kuan-Chang; Chen, Jung-Hui; Tsai, Tsung-Ming; Chang, Ting-Chang; Huang, Syuan-Yong; Zhang, Rui; Chen, Kai-Huang; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Liao, Kuo-Hsiao; Tai, Ya-Hsiang; Young, Tai-Fa; Sze, Simon M.; Ai, Chi-Fong; Wang, Min-Chuan; Huang, Jen-Wei 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 Supercritical fluid  RRAM  Hydration-dehydration reaction  Tin doping  ELECTROLYTE-BASED RERAM  CONDUCTIVE FILAMENTS  FILM   Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor 期刊论文 ieee electron device letters, 2014 Chen, Yi-Jiun; Chang, Kuan-Chang; Chang, Ting-Chang; Chen, Hsin-Lu; Young, Tai-Fa; Tsai, Tsung-Ming; Zhang, Rui; Chu, Tian-Jian; Ciou, Jian-Fa; Lou, Jen-Chung; Chen, Kai-Huang; Chen, Jung-Hui; Zheng, Jin-Cheng; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 DLC  HfO2  hydrogen  oxygen  RRAM  RANDOM-ACCESS MEMORY  MECHANISM  DEVICES  MODEL  RRAM