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Semiconductor device 专利
专利号: US9231375, 申请日期: 2016-01-05, 公开日期: 2016-01-05
作者:  TASAI, KUNIHIKO;  NAKAJIMA, HIROSHI;  FUTAGAWA, NORIYUKI;  YANASHIMA, KATSUNORI;  ENYA, YOHEI
收藏  |  浏览/下载:5/0  |  提交时间:2020/01/18
III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device 专利
专利号: US8953656, 申请日期: 2015-02-10, 公开日期: 2015-02-10
作者:  KYONO, TAKASHI;  TAKAGI, SHIMPEI;  SUMITOMO, TAKAMICHI;  YOSHIZUMI, YUSUKE;  ENYA, YOHEI
收藏  |  浏览/下载:15/0  |  提交时间:2019/12/26
Laser diode device and method of manufacturing laser diode device 专利
专利号: US8891568, 申请日期: 2014-11-18, 公开日期: 2014-11-18
作者:  FUTAGAWA, NORIYUKI;  NAKAJIMA, HIROSHI;  YANASHIMA, KATSUNORI;  KYONO, TAKASHI;  ADACHI, MASAHIRO
收藏  |  浏览/下载:15/0  |  提交时间:2019/12/24
Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device 专利
专利号: US8872156, 申请日期: 2014-10-28, 公开日期: 2014-10-28
作者:  YONEMURA, TAKUMI;  KYONO, TAKASHI;  ENYA, YOHEI
收藏  |  浏览/下载:15/0  |  提交时间:2019/12/24
Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diode 专利
专利号: US8488642, 申请日期: 2013-07-16, 公开日期: 2013-07-16
作者:  YOSHIZUMI, YUSUKE;  ENYA, YOHEI;  UENO, MASAKI;  KYONO, TAKASHI
收藏  |  浏览/下载:18/0  |  提交时间:2019/12/24
Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device 专利
专利号: US8477818, 申请日期: 2013-07-02, 公开日期: 2013-07-02
作者:  KUMANO, TETSUYA;  UENO, MASAKI;  KYONO, TAKASHI;  ENYA, YOHEI;  YANASHIMA, KATSUNORI
收藏  |  浏览/下载:12/0  |  提交时间:2019/12/26
Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser 专利
专利号: US8295317, 申请日期: 2012-10-23, 公开日期: 2012-10-23
作者:  UENO, MASAKI;  KYONO, TAKASHI
收藏  |  浏览/下载:17/0  |  提交时间:2019/12/26
Method for producing nitride semiconductor optical device and epitaxial wafer 专利
专利号: US8183071, 申请日期: 2012-05-22, 公开日期: 2012-05-22
作者:  AKITA, KATSUSHI;  ENYA, YOHEI;  KYONO, TAKASHI;  SUMITOMO, TAKAMICHI;  YOSHIZUMI, YUSUKE
收藏  |  浏览/下载:19/0  |  提交时间:2019/12/24
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 专利
专利号: US7933303, 申请日期: 2011-04-26, 公开日期: 2011-04-26
作者:  YOSHIZUMI, YUSUKE;  ENYA, YOHEI;  KYONO, TAKASHI;  ADACHI, MASAHIRO;  AKITA, KATSUSHI
收藏  |  浏览/下载:18/0  |  提交时间:2019/12/24


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