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浏览/检索结果: 共16条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Pd-Catalyzed Direct C-H Functionalization/Annulation of BODIPYs with Alkynes to Access Unsymmetrical Benzo[b]-Fused BODIPYs: Discovery of Lysosome-Targeted Turn-On Fluorescent Probes 期刊论文 JOURNAL OF ORGANIC CHEMISTRY, 2018, 卷号: Vol.83 No.16, 页码: 9538-9546 作者:  Yang, Xiuguang;  Jiang, Linfeng;  Yang, Mufan;  Zhang, Huaxing;  Lan, Jingbo 收藏  |  浏览/下载：9/0  |  提交时间：2019/02/28 Comparison of CMM and Micro-CT Volumetric Analysis of Polyethylene Tibial Knee Inserts in Total Knee Replacement 期刊论文 International Journal of Polymer Science, 2018, 卷号: Vol.2018, 页码: 3601480 作者:  Wei Jiang;  Cuicui Ji;  Huaxing Xiao;  Zhongmin Jin;  Yuntian Dai 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/26 Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 824-831 作者:  Lu, Xing;  Yu, Kun;  Jiang, Huaxing;  Zhang, Anping;  Lau, Kei May 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26 low pressure chemical vapor deposition (LPCVD) SiNx  interface traps  current collapse  passivation  AlGaN/GaN MIS high electron mobility transistors (MISHEMTs)   Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 832-839 作者:  Jiang, Huaxing;  Liu, Chao;  Chen, Yuying;  Lu, Xing;  Tang, Chak Wah 收藏  |  浏览/下载：14/0  |  提交时间：2019/11/26 thermal stability  passivation  GaN  threshold voltage  in situ SiN  gate dielectric   High performance monolithically integrated GaN Driving VMOSFET on LED (EI收录) 期刊论文 IEEE Electron Device Letters, 2017, 卷号: 38, 页码: 752-755 作者:  Lu, Xing[1];  Liu, Chao[2];  Jiang, Huaxing[2];  Zou, Xinbo[2];  Lau, Kei May[2] 收藏  |  浏览/下载：11/0  |  提交时间：2019/04/24 Field effect transistors  Gallium nitride  Integration  Monolithic integrated circuits  MOSFET devices  Semiconductor diodes  Semiconductor junctions  Transistors  Wide band gap semiconductors   Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate 期刊论文 APPLIED PHYSICS EXPRESS, 2016, 卷号: 9, 期号: [db:dc_citation_issue] 作者:  Lu, Xing;  Liu, Chao;  Jiang, Huaxing;  Zou, Xinbo;  Zhang, Anping 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/02 Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure 期刊论文 APPLIED PHYSICS LETTERS, 2016, 卷号: 109, 期号: [db:dc_citation_issue] 作者:  Lu, Xing;  Liu, Chao;  Jiang, Huaxing;  Zou, Xinbo;  Zhang, Anping 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/02 Off-state drain leakage reduction by post metallization annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Si 会议论文 作者:  Jiang, Huaxing;  Lu, Xing;  Liu, Chao;  Li, Qiang;  Lau, Kei May 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/02 metal-oxide-semiconductor structures  high electron mobility transistors  GaN  annealing  metallization  drain leakage   Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing 期刊论文 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 卷号: 31, 期号: [db:dc_citation_issue] 作者:  Lu, Xing;  Jiang, Huaxing;  Liu, Chao;  Zou, Xinbo;  Lau, Kei May 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/02 post-gate annealing  surface treatment  AlGaN/GaN  HEMT  off-state leakage current   High Voltage Low Current Collapse AlGaN/GaN MISHEMTs with in-situ SiN Gate Dielectric 会议论文 作者:  Jiang, Huaxing;  Liu, Chao;  Lu, Xing;  Lau, Kei May 收藏  |  浏览/下载：11/0  |  提交时间：2019/11/26 AlGaN/GaN MISHEMTs  high voltage  current collapse  in-situ SiN