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CORC

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Breakdown enhancement of diamond Schottky barrier diodes using boron implanted edge terminations 期刊论文
DIAMOND AND RELATED MATERIALS, 2019, 卷号: 92, 页码: 146-149
作者:  Yu, Xinxin;  Zhou, Jianjun;  Wang, Yanfeng;  Qiu, Feng;  Kong, Yuechan
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/19
Preparation of graphene/copper composites using solution-combusted porous sheet-like cuprous oxide 期刊论文
Journal of Materials Science, 2019, 卷号: Vol.54 No.1, 页码: 396-403
作者:  Fan, Zefu;  Chen, Tangsheng;  Chen, Xiaohua;  Xu, Longshan
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/13
Preparation of graphene/copper composites using solution-combusted porous sheet-like cuprous oxide 期刊论文
Journal of Materials Science, 2019, 卷号: Vol.54 No.1, 页码: 396-403
作者:  Fan, Zefu;  Chen, Tangsheng;  Chen, Xiaohua;  Xu, Longshan
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/13
Preparation of graphene/copper composites using solution-combusted porous sheet-like cuprous oxide. 期刊论文
Journal of Materials Science, 2019, 卷号: Vol.54 No.1, 页码: 396-403
作者:  Fan, Zefu;  Chen, Tangsheng;  Chen, Xiaohua;  Xu, Longshan
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/13
Preparation of graphene/copper composites using solution-combusted porous sheet-like cuprous oxide 期刊论文
JOURNAL OF MATERIALS SCIENCE, 2019, 卷号: Vol.54 No.1, 页码: 396-403
作者:  Fan, Zefu;  Chen, Tangsheng;  Chen, Xiaohua;  Xu, Longshan
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17
Preparation of graphene/copper composites using solution-combusted porous sheet-like cuprous oxide 期刊论文
JOURNAL OF MATERIALS SCIENCE, 2019, 卷号: Vol.54 No.1, 页码: 396-403
作者:  Fan, Zefu;  Chen, Tangsheng;  Chen, Xiaohua;  Xu, Longshan
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/13
High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018
作者:  Zhu, Guangrun;  Gao, Hongwei(高宏伟);  Sun, Qian(孙钱);  Chen, Tangsheng;  Yang, Hui(杨辉)
收藏  |  浏览/下载：85/0  |  提交时间：2019/03/27
Positive Shift in Threshold Voltage Induced by CuO and NiOxGate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 8
作者:  Wang, Jingli;  Zou, Xuming;  Zhang, Kai;  Guo, Yaxiong;  Li, Yi
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/05
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 8
作者:  Li, Yi;  Guo, Yaxiong;  Zhang, Kai;  Zou, Xuming;  Wang, Jingli
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/05
Positive Shift in Threshold Voltage Induced by CuO and NiOxGate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 8
作者:  Li, Yi;  Guo, Yaxiong;  Zhang, Kai;  Zou, Xuming;  Wang, Jingli
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/05

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