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半导体研究所 [10]
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Novel strip EAM with a ring resonator on InP/InGaAsP-MQW
会议论文
作者:
Zhou, Zheng
;
Cai, Chun
;
Sun, Xiao-Han
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2020/11/15
Electroabsorption modulators
Etching
Gallium compounds
III-V semiconductors
Indium phosphide
Microwave resonators
Optical communication
Optical communication equipment
Optical resonators
Photonic integration technology
Resonators
Semiconducting indium phosphide
3D FDTD
Electric absorption
Environmental factors
Functional devices
Photonic microwave
Substrate material
Terminal equipment
Time-domain methods
Butt-coupled movpe growth for high-performance electro-absorption modulator integrated with a dfb laser
期刊论文
Journal of crystal growth, 2007, 卷号: 308, 期号: 2, 页码: 297-301
作者:
Cheng, YuanBing
;
Pan, JiaoQing
;
Liang, Song
;
Feng, Wen
;
Liao, Zaiyi
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Coupling efficiency
Butt-joint scheme
Metal-organic vapor phase epitaxy
Selective area growth (sag)
Semiconducting indium phosphide
Laser diodes
Effects of v/iii ratio on ingaas and inp grown at low temperature by lp-mocvd
期刊论文
Journal of crystal growth, 2004, 卷号: 260, 期号: 1-2, 页码: 23-27
作者:
Jiang, L
;
Lin, T
;
Wei, X
;
Wang, GH
;
Zhang, GZ
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/05/12
Doping
X-ray diffraction
Low press
Metalorganic vapor phase epitaxy
Semiconducting iii-v materials
Semiconducting indium phosphide
Controlled cleavage of single semiconducting nanowires and study on the suitability of their use as nanocavities for nanolasers
期刊论文
应用物理学快报, 2004
Chen, Q
;
Peng, LM
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2015/11/12
INDIUM-PHOSPHIDE NANOWIRES
Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Zhao, YW
;
Dong, ZY
;
Zhang, YH
;
Li, CJ
收藏
  |  
浏览/下载:177/52
  |  
提交时间:2010/03/29
DEEP-LEVEL DEFECTS
FE-DOPED INP
GROWN INP
SPECTROSCOPY
RESONANCE
WAFER
Microdefects and electrical uniformity of inp annealed in phosphorus and iron phosphide ambiances
期刊论文
Journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
作者:
Dong, ZY
;
Zhao, YW
;
Zeng, YP
;
Duan, ML
;
Sun, WR
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/05/12
Annealing
Defects
Etching
Semiconducting indium phosphide
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
作者:
Dong, ZY
;
Zhao, YW
;
Zeng, YP
;
Duan, ML
;
Sun, WR
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2021/02/02
annealing
defects
etching
semiconducting indium phosphide
Influence of semi-insulating inp substrates on inalas epilayers grown by molecular beam epitaxy
期刊论文
Journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
作者:
Dong, HW
;
Zhao, YW
;
Zeng, YP
;
Jiao, JH
;
Li, JM
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/05/12
Diffusion
Interfaces
Substrates
Molecular beam epitaxy
Phosphides
Semiconducting indium phosphide
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
作者:
Dong, HW
;
Zhao, YW
;
Zeng, YP
;
Jiao, JH
;
Li, JM
收藏
  |  
浏览/下载:0/0
  |  
提交时间:2021/02/02
diffusion
interfaces
substrates
molecular beam epitaxy
phosphides
semiconducting indium phosphide
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Dong HW
;
Zhao YW
;
Zeng YP
;
Jiao JH
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
diffusion
interfaces
substrates
molecular beam epitaxy
phosphides
semiconducting indium phosphide
UNDOPED SEMIINSULATING INP
CHEMICAL-VAPOR-DEPOSITION
PHOSPHIDE VAPOR
FE
INTERFACE
PHOTOLUMINESCENCE
WAFER
UNIFORMITY
DIFFUSION
PRESSURE
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