CORC

浏览/检索结果: 共13条,第1-10条 帮助

已选(0)清除 条数/页:   排序方式:
Ultrafast rising of output electric impulse of high gain semi-insulated GaAs PCSS 会议论文
作者:  Ji, Weili;  Shi, Wei;  Jia, Wanli
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/10
Ultrafast rising of output electric impulse of high gain semi-insulated GaAs PCSS 会议论文
2011 International Conference on Electronics and Optoelectronics, ICEOE 2011, Dalian, China, 2011-07-29
作者:  Ji, Weili;  Shi, Wei;  Jia, Wanli
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/20
Optical properties of the e-0+delta(0) energy level higher than the bandgap of gaas studied by micro-photoluminescence technique 期刊论文
Acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4213-4217
作者:  Bao Zhi-Hua;  Jing Wei-Ping;  Luo Xiang-Dong;  Tan Ping-Heng
收藏  |  浏览/下载:22/0  |  提交时间:2019/05/12
Two-dimensional Monte Carlo simulation of screening of the bias field in terahertz generation from semi-insulated GaAs photoconductors 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 4, 页码: 2042-2046
Jia, WL; Ji, WL; Shi, W
收藏  |  浏览/下载:8/0  |  提交时间:2012/03/24
Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 7, 页码: 4213-4217
Bao ZH (Bao Zhi-Hua); Jing WP (Jing Wei-Ping); Luo XD (Luo Xiang-Dong); Tan PH (Tan Ping-Heng)
收藏  |  浏览/下载:125/0  |  提交时间:2010/03/29
Preparation and afm characterization of self-ordered porous alumina films on semi-insulated gaas substrate 期刊论文
Materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 337-340
作者:  Zhou, H. Y.;  Qu, S. C.;  Wang, Z. G.;  Liang, L. Y.;  Cheng, B. C.
收藏  |  浏览/下载:13/0  |  提交时间:2019/05/12
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 337-340
Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ
收藏  |  浏览/下载:40/0  |  提交时间:2010/04/11
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ
收藏  |  浏览/下载:132/26  |  提交时间:2010/03/29
Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 277, 期号: 1-4, 页码: 21
Wu, SD; Guo, LW; Li, ZH; Shang, XZ; Wang, W; Huang, Q; Zhou, JM
收藏  |  浏览/下载:13/0  |  提交时间:2013/09/17
Generation of steady and jitter-free ultra-fast electrical pulses with GaAs potoconductive switches 期刊论文
acta physica sinica, 2004, 卷号: 53, 期号: 6, 页码: 1716-1720
作者:  Shi, W;  Ma, DM;  Zhao, W
收藏  |  浏览/下载:12/0  |  提交时间:2015/07/29


©版权所有 ©2017 CSpace - Powered by CSpace