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浏览/检索结果: 共1条，第1-1条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Low drive-voltage and high-bandwidth electro-optic modulators based on BaTiO3 thin-film waveguides (EI CONFERENCE) 会议论文 Science and Technology of Dielectrics for Active and Passive Photonic Devices - 210th Electrochemical Society Meeting, October 29, 2006 - November 3, 2006, Cancun, Mexico Sun D. G.; Fu X. H.; Liu Z. F.; Ho S. T.; Wessels B. W. 收藏  |  浏览/下载：31/0  |  提交时间：2013/03/25 We investigated electro-optic modulator structures to target low drive voltage  high-speed modulation  and small device size with c-axis grown BaTiO3/MgO ferro-electric thin films. In this study  the calculations are focused on the ideal thin film with a quadratic relation between the half-wave drive voltage V and the interaction length L in the electro-optic modulation case we obtained in previous work. With the quadratic electro-optic modulating relation and the optimal rib waveguide structure of BaTiO3/MgO thin films  the frequency-voltage-size performances for 2.5GHz  10GHz  40GHz  and 100GHz modulation bandwidths have been obtained under half-wave drive voltages of 0.8V  1.6V  3.0V and 4.8V  respectively  for the ideal film with r51=730 pm/V at 1550nm wavelength  where both the phase velocity matching condition and the conductor induced microwave attenuation are considered. The required device lengths to achieve these four typical values of modulation bandwidth are 3.3 mm  0.8 mm  0.4 mm and 0.2 mm  respectively. With the c-axis grown BaTiO3/MgO crystal thin films and the quadratic electro-optic modulating relation  an electro-optic coefficient of reff=180 pm/V for the c-axis grown BaTiO3/MgO ferro-electric thin films was measured  which is relatively far from the ideal value of r51=560 pm/V. copyright The Electrochemical Society.