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浏览/检索结果: 共11条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Self-consistent analysis of double-delta-doped inalas/ingaas/inp hemts 期刊论文 Chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741 作者:  Li Dong-Lin;  Zeng Yi-Ping 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 Two-dimensional electron gas  High electron mobility transistor  Self-consistent calculation  Inalas/ingaas heterostructure   Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs 期刊论文 chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741 Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping) 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 two-dimensional electron gas  high electron mobility transistor  self-consistent calculation  InAlAs/InGaAs heterostructure  CHARGE CONTROL MODEL  ELECTRON-MOBILITY TRANSISTORS  PSEUDOMORPHIC INGAAS HEMT  FIELD-EFFECT TRANSISTOR  QUANTUM-WELL  ALGAAS/INGAAS PHEMTS  GATE RECESS  HIGH-SPEED  HETEROJUNCTION  CHANNEL   Photoluminescence of algaas/ingaas/gaas pseudomorphic hemts with different thickness of spacer layer 期刊论文 Journal of crystal growth, 2001, 卷号: 231, 期号: 4, 页码: 520-524 作者:  Cao, X;  Zeng, YP;  Kong, MY;  Pan, LA;  Wang, BQ 收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12 Molecular beam epitaxy  Semiconducting iii-v materials  High electron mobility transistors   The keys to get high transconductance of algaas/ingaas/gaas pseudomorphic hemts devices 期刊论文 Solid-state electronics, 2001, 卷号: 45, 期号: 5, 页码: 751-754 作者:  Cao, X;  Zeng, YP;  Kong, MY;  Pan, L;  Wang, BQ 收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12 Molecular beam epitaxy  Pseudomorphic hemts  Photoluminescence   The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices 期刊论文 solid-state electronics, 2001, 卷号: 45, 期号: 5, 页码: 751-754 Cao X; Zeng YP; Kong MY; Pan L; Wang BQ; Zhu ZP 收藏  |  浏览/下载：102/6  |  提交时间：2010/08/12 molecular beam epitaxy  pseudomorphic HEMTs  photoluminescence   Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文 journal of crystal growth, 2001, 卷号: 231, 期号: 4, 页码: 520-524 Cao X; Zeng YP; Kong MY; Pan LA; Wang BQ; Zhu ZP; Wang XG; Chang Y; Chu JH 收藏  |  浏览/下载：134/8  |  提交时间：2010/08/12 molecular beam epitaxy  semiconducting III-V materials  high electron mobility transistors  ELECTRON-MOBILITY TRANSISTOR  CARRIER DENSITY  QUANTUM-WELLS  BAND-GAP   Photoluminescence studies on pseudomorphic delta-doped algaas/ingaas/gaas quantum wells 期刊论文 Journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 5, 页码: 333-337 作者:  Wang, XG;  Chang, Y;  Gui, YS;  Chu, JH;  Cao, X 收藏  |  浏览/下载：7/0  |  提交时间：2019/05/12 P-hemts  Quantum well  Photoluminescence   Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells 期刊论文 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 5, 页码: 333-337 Wang XG; Chang Y; Gui YS; Chu JH; Cao X; Zeng YP; Kong MY 收藏  |  浏览/下载：34/0  |  提交时间：2010/08/12 p-HEMTs  quantum well  photoluminescence  GAAS   Molecular beam epitaxy growth of iny2al1-y2as/in0.73ga0.27as/iny1al1-y1as/inp p-hemts with enhancement conductivity using an intentional nonlattice-matched buffer layer 期刊论文 Journal of vacuum science & technology b, 1997, 卷号: 15, 期号: 6, 页码: 2021-2025 作者:  Jiang, C;  Xu, B;  Li, HX;  Liu, FQ;  Gong, Q 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/Iny1Al1-y1As/InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer 期刊论文 journal of vacuum science & technology b, 1997, 卷号: 15, 期号: 6, 页码: 2021-2025 作者:   收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12 HETEROSTRUCTURES