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北京大学 [10]

沈阳自动化研究所 [1]

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期刊论文 [6]

会议论文 [1]

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	Effects of Non-ideal Switches on Speed of SC Integrator 会议论文 2016 13th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016, Hangzhou, China, October 25-28, 2016 作者: Xu BS(徐保树); Shi ZL(史泽林); Wang X(王霄); Zhao YH(赵耀宏) 收藏 \| 浏览/下载：13/0 \| 提交时间：2017/11/15 Switch switched capacitor(SC) integrator dynamic error(DE) optimization
	Analytic Yet Continuous Surface Potential versus Voltage Equation of Intrinsic Nanoscale Surrounding-Gate MOSFETs and Solution from Accumulation to Strong Inversion Region 期刊论文 journal of computational and theoretical nanoscience, 2013 Ye, Yun; He, Jin; Zhang, Aixing; He, Hongyue; Chen, Qin; Wang, Hao 收藏 \| 浏览/下载：7/0 \| 提交时间：2015/11/16 Non-Classical CMOS Surrounding-Gate MOSFETs Device Physics Surface Potential Accuracy Continuity Issue SYMMETRIC DOUBLE-GATE MODEL CHARGE NONEQUILIBRIUM CAPACITANCE
	A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors 期刊论文 journal of computational and theoretical nanoscience, 2011 Zhang, Xukai; He, Jin; Zhang, Lining; Zhang, Jian; Ma, Yong; Wu, Wen; Wang, Wenping; Wang, Ruonan; Gu, Xin; Chan, Mansun 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/13 Bulk MOSFET Limit Non-Classical CMOS Double-Gate MOSFET Device Physics Surface Potential-Based Model MOSFETS DEVICE
	A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs 其他 2009-01-01 He, Jin; Zhang, Lining; Zheng, Rui; Zhang, Jian; Chan, Mansun 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/10 non-classical CMOS surface potential DG-MOSFETs device physics compact modelling ULSI circuit simulation DRAIN-CURRENT DG MOSFETS CHARGE MODEL EQUATION NONEQUILIBRIUM APPROXIMATION TRANSISTORS CAPACITANCE VOLTAGE
	An explicit carrier-based compact model for nanowire surrounding-gate MOSFET simulation 期刊论文分子模拟, 2008 He, J.; Bian, W.; Zhang, J.; Feng, J.; Zhang, X.; Wu, W.; Chan, M. 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/10 molecular devices nanowire non-classical CMOS surrounding-gate MOSFET device model
	非掺杂对称双栅的基于完整表面电势的核心模型期刊论文半导体学报, 2008 何进; 张立宁; 张健; 傅越; 郑睿; 张兴收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/12 体MOSFET极限非传统CMOS 双栅MOSFET 器件物理表面势模型 bulk MOSFET limit non-classical CMOS double-gate MOSFET device physics surface potential-based model
	Continuous surface potential versus voltage equation of undoped surrounding-gate MOSFETs and its solution 其他 2007-01-01 Zheng, Rui; He, Jin; Zhang, Lining; Zhang, Han; Fu, Yue; Zhang, Xing 收藏 \| 浏览/下载：2/0 \| 提交时间：2015/11/10 non-classical CMOS surrounding-gate MOSFETs device physics surface potential accuracy continuity issue MODEL
	Analytic channel potential solution to the undoped surrounding-gate MOSFETs 期刊论文固体电子学, 2007 He, Jin; Tao, Yadong; Liu, Feng; Feng, Jie; Yang, Shengqi 收藏 \| 浏览/下载：4/0 \| 提交时间：2015/11/10 non-classical CMOS surrounding-gate MOSFETs surface potential compact modeling LAMBERT W-FUNCTION MODEL
	An explicit current-voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration 期刊论文固体电子学, 2007 He, Jin; Bian, Wei; Tao, Yadong; Liu, Feng; Lu, Kailiang; Wit, Wen; Wang, Ting; Chan, Mansun 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/12 non-classical MOSFETs compact modeling double-gate MOSFETs explicit model COMPACT MODEL DRAIN-CURRENT PERFORMANCE DIFFUSION DEVICE DESIGN CMOS
	A complete surface potential-based core model for the undoped symmetric double-gate MOSFETs 其他 2007-01-01 He, Jin; Zhang, Lining; Zhang, Jian; Zheng, Rui; Fu, Yue; Chan, Mansun 收藏 \| 浏览/下载：3/0 \| 提交时间：2015/11/13 non-classical CMOS DG-MOSFET device physics surface potential-based model DRAIN-CURRENT

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