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浏览/检索结果: 共7条，第1-7条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs 其他 2009-01-01 He, Jin; Zhang, Lining; Zhang, Jian; Ma, Chenyue; Liu, Feilong; Chan, Mansun 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10 non-classical MOS transistor  surrounding-gate MOSFETs  device physics  surface potential model  non-charge-sheet approximation  MOS-TRANSISTOR  CHARGE  PERFORMANCE   A surface potential-based non-charge-sheet core model for undoped surrounding-gate MOSFETs 期刊论文 journal of semiconductors, 2009 He, Jin; Zhang, Jian; Zhang, Lining; Ma, Chenyue; Chan, Mansun 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/16 A Complete Surface Potential-Based Current-Voltage and Capacitance-Voltage Core Model for Undoped Surrounding-Gate MOSFETs 其他 2008-01-01 He, Jin; Song, Yan; Liu, Feng; Liu, Feilong; Zhang, Lining; Zhang, Jian; Zhang, Xing 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/12 non-classical MOSFET  surrounding-gate MOSFETs  device physics  surface potential model  non-charge-sheet approximation   A Complete Surface Potential-Based Current-Voltage and Capacitance-Voltage Core Model for Undoped Surrounding-Gate MOSFETs 其他 2008-01-01 Jin He; Yan Song; Feng Liu; Feilong Liu; Lining Zhang; Jian Zhang; Xing Zhang 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 non-classical MOSFET  surrounding-gate MOSFETs  device physics  surface potential model  non-charge-sheet approximation  non-classical MOSFET  surrounding-gate MOSFETs  device physics  surface potential model  non-charge-sheet approximation   A complete analytic surface potential-based core model for undoped cylindrical surrounding-gate MOSFETs 其他 2008-01-01 Jin, He; Jian, Zhang; Lining, Zhang; Chenyue, Ma; Mansun, Chan 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 A carrier-based approach for compact modeling of the long-channel-undoped symmetric double-gate MOSFETs 期刊论文 ieee电子器件汇刊, 2007 He, Jin; Liu, Feng; Zhang, Jian; Feng, Jie; Hu, Jinhua; Yang, Shengqi; Chan, Mansun 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 compact modeling  device physics  double-gate (DG) MOSFETs  non-charge-sheet approximation  nonclassical devices  DRAIN-CURRENT  ASYMMETRIC DG  SOI MOSFETS  CHARGE  DEVICE  DIFFUSION   A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs (CPCI-S收录) 会议论文 MOLECULAR SIMULATION 作者:  He, Jin[1,2,3];  Zhang, Lining[1];  Zhang, Jian[1];  Ma, Chenyue[1];  Liu, Feilong[1] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/17 non-classical MOS transistor  surrounding-gate MOSFETs  device physics  surface potential model  non-charge-sheet approximation