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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 An Effective Method of Reducing TSV Thermal Stress by STI 会议论文 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01 作者:  Wang, Fengjuan;  Qu, Xiaoqing;  Yu, Ningmei 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/20 Keywords Three-dimensional integrated circuits (3-D IC)  through-silicon via (TSV)  shallow trench isolation (STI)  thermal stress  keep-out zone (KOZ)   An Effective Approach of Improving Electrical and Thermo-Mechanical Reliabilities of Through-Silicon Vias 期刊论文 2017, 卷号: 17, 页码: 106-112 作者:  Wang, Fengjuan;  Yu, Ningmei 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/20 Crosstalk noise  highly doped layer (HDL)  keep-out zone (KOZ)  through-silicon via (TSV)   Effects of coaxial through-silicon via on carrier mobility along [100] and [110] crystal directions of (100) silicon 期刊论文 2015, 卷号: 12 作者:  Wang, Fengjuan;  Yu, Ningmei;  Zhu, Zhangming;  Yin, Xiangkun;  Yang, Yintang 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/20 coaxial through-silicon via (TSV)  anisotropic silicon  carrier mobility  finite element analysis (FEA)  keep-out-zone (KOZ)   Study on thermal stress and keep-out zone induced by Cu and SiO2 filled coaxial-annular through-silicon via 期刊论文 2015, 卷号: 12 作者:  Wang, Fengjuan;  Yu, Ningmei 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/20 thermal stress  keep-out zone (KOZ)  anisotropic silicon  coaxial-annular through-silicon via (CA-TSV)