QQ客服 官方微博 反馈留言

浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214 作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2] 收藏  |  浏览/下载：20/0  |  提交时间：2022/04/07 Total ionizing dose irradiation  UTBB FD-SOI  1  f noise   Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ] 收藏  |  浏览/下载：98/0  |  提交时间：2019/05/14 Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)   Simulation analysis of thick film fully depleted SOI MOSFET implemented by anti-doped silicon island 期刊论文 tien tzu hsueh paoacta electronica sinica, 2002 Yang, Sheng-Qi; He, Jin; Huang, Ru; Zhang, Xing 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/16 Operation of suspended lateral SOI PIN photodiode with aluminum back gate 会议论文 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 155-158, 2016 作者:  Li, GL;  Andre, N;  Poncelet, O;  Gerard, P;  Ali, SZ 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/31 silicon-on-insulator (SOI)  lateral PIN photodiode  fully-depleted (FD) condition  back gate  aluminum reflector  numerical simulation  Atlas