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浏览/检索结果: 共3条，第1-3条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ] 收藏  |  浏览/下载：99/0  |  提交时间：2019/05/14 Back-gate biasing  forward body bias (FBB)  total ionizing dose (TID)  ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)   Exploring Hybrid STT-MTJ/CMOS Energy Solution in Near-/Sub-Threshold Regime for IoT Applications 期刊论文 IEEE TRANSACTIONS ON MAGNETICS, 2018, 卷号: 54 作者:  Cai, Hao;  Wang, You;  Naviner, Lirida Alves de Barros;  Yang, Jun;  Zhao, Weisheng 收藏  |  浏览/下载：12/0  |  提交时间：2019/12/30 Flip-flop (FF)  forward back bias (FBB)  fully depleted silicon on insulator (FD-SOI)  magnetic tunnel junction (MTJ)/CMOS integration  near-/sub-threshold  ultralow power   Employing the mixed FBB/RBB in the design of FinFET logic gates 其他 2015-01-01 Wang, Tian; Cui, Xiaoxin; Liao, Kai; Liao, Nan; Ni, Yewen; Yu, Dunshan; Cui, Xiaole 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03