QQ客服 官方微博 反馈留言

浏览/检索结果: 共8条，第1-8条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A deep learning-based radiomic nomogram for prognosis and treatment decision in advanced nasopharyngeal carcinoma: A multicentre study 期刊论文 EBIOMEDICINE, 2021, 卷号: 70, 页码: 10 作者:  Zhong, Lianzhen;  Dong, Di;  Fang, Xueliang;  Zhang, Fan;  Zhang, Ning 收藏  |  浏览/下载：74/0  |  提交时间：2021/11/03 Multi-task deep learning  Radiomic nomogram  Survival analysis  Treatment decision  Advanced nasopharyngeal carcinoma   Deep levels in high resistivity gan detected by thermally stimulated luminescence and first-principles calculations 期刊论文 Journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: 4 作者:  Gai, Yanqin;  Li, Jingbo;  Hou, Qifeng;  Wang, Xiaoliang;  Xiao, Hongling 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing 期刊论文 CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 1, 页码: 246-250 作者:  Li Bing-Sheng;  Zhang Hong-Hua;  Zhou Li-Hong;  Yang Yi-Tao;  Zhang Chong-Hong 收藏  |  浏览/下载：5/0  |  提交时间：2009/11/20 helium-ion irradiation  defect activation energy  charge-sensitive deep level transient spectroscopy   Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403 作者:  Li JB;  Hou QF 收藏  |  浏览/下载：65/11  |  提交时间：2010/03/08 N-TYPE GAN  ELECTRON-MOBILITY TRANSISTORS  VAPOR-PHASE EPITAXY  DEFECTS  THERMOLUMINESCENCE  CARBON  TRAP   Point defects in III-V compound semiconductors 期刊论文 defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93 Chen N 收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12 compound semiconductors  point defects  deep level centres  stoichiometry  MOLECULAR-BEAM EPITAXY  GAAS SINGLE-CRYSTALS  SEMIINSULATING GALLIUM-ARSENIDE  SEMI-INSULATING GAAS  ELECTRICAL-PROPERTIES  LATTICE-PARAMETER  NATIVE DEFECTS  CARBON  DIFFRACTOMETER  STOICHIOMETRY   Point defects in iii-v compound semiconductors 期刊论文 Defects and diffusion in semiconductors, 2000, 卷号: 183-1, 页码: 85-93 作者:  Chen, N 收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12 Compound semiconductors  Point defects  Deep level centres  Stoichiometry   Effects of energy deposition by nuclear scattering in silicon p-i-n diode detectors 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 卷号: 135, 期号: 1-4, 页码: 523-531 作者:  Whitlow, HJ;  Roosendaal, SJ;  El Bouanani, M;  Ghetti, R;  Johnston, PN 收藏  |  浏览/下载：18/0  |  提交时间：2019/10/10 Si charged particle detectors  p-i-n diodes  radiation damage  leakage current  nuclear stopping   Characterization of recombination centres in n-type Hg1-xCdxTe 期刊论文 semiconductor science and technology, 1996, 卷号: 11, 期号: 12, 页码: 1878-1881 Zhou J; Feng SL; Lu LW; Si CC; Li YG; Hu XN 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/17