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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Irradiation effects of 65 MeV Kr-ions on structure and optical band-gap of nc-Si:H films 期刊论文 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 卷号: 314, 页码: 158-161 作者:  Zhu, Yabin;  Wang, Zhiguang;  Gao, Xing;  Sun, Jianrong;  Shen, Tielong 收藏  |  浏览/下载：18/0  |  提交时间：2018/07/05 Nc-si Film  Heavy Ion irradiatIon  Structure  Optical Band-gap   Electron transport in polymer-derived amorphous silicon oxycarbonitride ceramics (EI CONFERENCE) 会议论文 Wang Y.; Jiang T.; Zhang L.; An L. 收藏  |  浏览/下载：51/0  |  提交时间：2013/03/25 The electron transport behavior of polymer-derived amorphous silicon oxycarbonitride ceramics is studied by measuring their temperature-dependent electrical conductivities. The experimental results are analyzed using theoretical models. The results reveal that the materials exhibit three conduction mechanisms: conduction in extended states  conduction in band tails  and conduction in localized states. Particularly  it is found that in a low-temperature regime  the conduction of the materials follows a band tail hopping mechanism  rather than the previously assumed variable range hopping mechanism. The results also reveal that energy gaps such as EC-E F and EC-EA decrease with increasing pyrolysis temperature. 2009 The American Ceramic Society.   Light emitting semiconductor devices 专利 专利号: GB1342767A, 申请日期: 1974-01-03, 公开日期: 1974-01-03 作者:  - 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/24 Halfgeleider-injectielaser met heterostructuur. 专利 专利号: GB1288082A, 申请日期: 1972-09-06, 公开日期: 1972-09-06 作者:  - 收藏  |  浏览/下载：14/0  |  提交时间：2019/12/26