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CORC

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Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters 期刊论文
ACS APPLIED NANO MATERIALS, 2020, 卷号: 3, 期号: 6, 页码: 5335-5342
作者:  Xu, Houqiang;  Jiang, Jie'an;  Dai, Yijun;  Cui, Mei;  Li, Kuang-hui
收藏  |  浏览/下载：70/0  |  提交时间：2020/12/16
Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array 期刊论文
NANOSCALE, 2017, 卷号: 9, 期号: 40, 页码: 15477-15483
作者:  Guo, Wei;  Yang, Zhenhai;  Li, Junmei;  Yang, Xi;  Zhang, Yun
收藏  |  浏览/下载：29/0  |  提交时间：2017/12/25
Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者:  P. Chen;  D. G. Zhao;  D. S. Jiang;  H. Long;  M. Li
收藏  |  浏览/下载：25/0  |  提交时间：2018/07/11
Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2016, 卷号: 97
作者:  Li, X;  Zhao, DG;  Yang, J;  Jiang, DS;  Liu, ZS
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11
Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy 期刊论文
SCIENTIFIC REPORTS, 2016, 卷号: 6
作者:  Bao, W;  Su, ZC;  Zheng, CC;  Ning, JQ(宁吉强);  Xu, SJ
收藏  |  浏览/下载：24/0  |  提交时间：2017/03/11
Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 625, 页码: 5
作者:  Liu, W;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载：17/0  |  提交时间：2015/12/31
Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells 期刊论文
OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 9
作者:  Liu, W;  Zhao, DG;  Jiang, DS;  Chen, P;  Liu, ZS
收藏  |  浏览/下载：12/0  |  提交时间：2015/12/31
Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 卷号: 32, 期号: 5
作者:  Yang, J;  Yang H(杨辉)
收藏  |  浏览/下载：28/0  |  提交时间：2014/12/01
Surface Plasmon Enhanced Hot Exciton Emission in Deep UV-Emitting AlGaN Multiple Quantum Wells 期刊论文
http://dx.doi.org/10.1002/adom.201300463, 2014
Yin, Jun; Li, Yang; Chen, Shengchang; Li, Jing; Kang, Junyong; Li, Wei; Jin, Peng; Chen, Yonghai; Wu, Zhihao; Dai, Jiangnan; Fang, Yanyan; Chen, Changqing; 李静; 康俊勇
收藏  |  浏览/下载：5/0  |  提交时间：2015/07/22
Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs 期刊论文
http://dx.doi.org/10.1016/j.physe.2013.10.033, 2014
Sun, Li; Weng, Guo-En; Liang, Ming-Ming; Ying, Lei-Ying; Lv, Xue-Qin; Zhang, Jiang-Yong; Zhang, Bao-Ping; 张江勇; 张保平
收藏  |  浏览/下载：3/0  |  提交时间：2015/07/22

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