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Mobility anisotropy of two-dimensional semiconductors 期刊论文
PHYSICAL REVIEW B, 2016
Lang, Haifeng; Zhang, Shuqing; Liu, Zhirong
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
Stacked bilayer phosphorene: strain-induced quantum spin hall state and optical measurement 期刊论文
Scientific reports, 2015, 卷号: 5, 页码: 13
作者:  Zhang, Tian;  Lin, Jia-He;  Yu, Yan-Mei;  Chen, Xiang-Rong;  Liu, Wu-Ming
收藏  |  浏览/下载：30/0  |  提交时间：2019/05/09
Investigation of Hole Mobility in Strained InSb Ultrathin Body pMOSFETs 期刊论文
ieee电子器件汇刊, 2015
Chang, Pengying; Liu, Xiaoyan; Zeng, Lang; Wei, Kangliang; Du, Gang
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons? 期刊论文
PLOS ONE, 2015
Mao, Ling-Feng; Ning, Huan-Sheng; Wang, Jin-Yan
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
GAN  TRANSPORT  DEFECT  LAYERS  HFETS  
The nonlinear Rashba effect in Hg0.77Cd0.23Te inversion layers probed by weak antilocalization analysis 期刊论文
J.Appl.Phys, 2013, 卷号: 113, 期号: 1
作者:  X.Z.Liu G.Yu L.M.Wei T.Lin Y.G.Xu J.R.Yang Y.F.Wei S.L.Guo J.H.Chu N.L.RowellandD.J.Lockwood
收藏  |  浏览/下载：10/0  |  提交时间：2014/11/10
Model-Based Prediction of the Plasma Oscillation Excitation Response Characteristics of a High-Electron Mobility Transistor-Based Terahertz Photomixer with the Cap Region 期刊论文
journal of computational and theoretical nanoscience, 2012
Chen, Yu; He, Jin; Liang, Hai Lang; Ma, Yong; Chen, Qin; Su, Yanmei; He, Hong Yu; Chan, Mansun; Cao, Juncheng
收藏  |  浏览/下载：7/0  |  提交时间：2015/11/13
Weak antilocalization effect in high-mobility two-dimensional electron gas in an inversion layer on p-type HgCdTe 期刊论文
Appl. Phys. Lett., 2011, 卷号: 99, 期号: 4
作者:  R. Yang;  K.H.Gao;  L.M.Wei
收藏  |  浏览/下载：7/0  |  提交时间：2012/10/23
应变硅n-MOSFET中电子迁移率的增强及其温度特性 期刊论文
2010, 2010
张侃; 梁仁荣; 徐阳; 许军; ZHANG Kan; LIANG Renrong; XU Yang; XU Jun
收藏  |  浏览/下载：5/0
A rigorous carrier-based analytic model for undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs 期刊论文
分子模拟, 2008
He, J.; Bian, W.; Chen, Y.; Wei, Y.; Zhang, L.; Zhang, J.; Chan, M.
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10
An analytic model to account for quantum-mechanical effects of MOSFETs using a parabolic potential well approximation 期刊论文
ieee电子器件汇刊, 2006
He, Jin; Chan, Mansun; Zhang, Xing; Wang, Yangyuan
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/12

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