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Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文
ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian
收藏  |  浏览/下载:2/0  |  提交时间:2019/09/17
Room-temperature continuous-wave electrically pumped InGaN GaN quantum well blue laser diode directly grown on Si 期刊论文
Light-Science & Applications, 2018, 卷号: 7, 页码: 6
作者:  Sun, Y.;  Zhou, K.;  Feng, M. X.;  Li, Z. C.;  Zhou, Y.
收藏  |  浏览/下载:5/0  |  提交时间:2019/09/17
Stress analysis of transferable crack-free gallium nitride microrods grown on graphene/SiC substrate 期刊论文
MATERIALS LETTERS, 2016, 卷号: 185
作者:  Qi, Lin;  Xu, Yu;  Li, Zongyao;  Zhao, En;  Yang, Song
收藏  |  浏览/下载:34/0  |  提交时间:2017/03/11
Growth of gan film on si (111) substrate using aln sandwich structure as buffer 期刊论文
Journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan, Xu;  Wei, Meng;  Yang, Cuibai;  Xiao, Hongling;  Wang, Cuimei
收藏  |  浏览/下载:41/0  |  提交时间:2019/05/12
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan, Xu;  Wei, Meng;  Yang, Cuibai;  Xiao, Hongling;  Wang, Cuimei
收藏  |  浏览/下载:11/0  |  提交时间:2021/02/02
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载:81/5  |  提交时间:2011/07/05
The effect of low temperature aln interlayers on the growth of gan epilayer on si (111) by mocvd 期刊论文
Superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
作者:  Luo, Weijun;  Wang, Xiaoliang;  Guo, Lunchun;  Xiao, Hongling;  Wang, Cuimei
收藏  |  浏览/下载:26/0  |  提交时间:2019/05/12
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文
superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Luo, WJ; Wang, XL; Guo, LC; Xiao, HL; Wang, CM; Ran, JX; Li, JP; Li, JM
收藏  |  浏览/下载:83/1  |  提交时间:2010/03/08
The effect of the alxga1-xn/ain buffer layer on the properties of gan/si(111) film grown by nh3-mbe 期刊论文
Journal of crystal growth, 2005, 卷号: 280, 期号: 3-4, 页码: 346-351
作者:  Zhang, NH;  Wang, XL;  Zeng, YP;  Xiao, HL;  Wang, JX
收藏  |  浏览/下载:15/0  |  提交时间:2019/05/12
Growth of crack-free algan film on thin aln interlayer by mocvd 期刊论文
Journal of crystal growth, 2004, 卷号: 268, 期号: 1-2, 页码: 35-40
作者:  Jin, RQ;  Liu, JP;  Zhang, JC;  Yang, H
收藏  |  浏览/下载:19/0  |  提交时间:2019/05/12


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