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浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Molecular beam epitaxy of gasb on gaas substrates with alsb/gasb compound buffer layers 期刊论文 Thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230 作者:  Hao, Ruiting;  Deng, Shukang;  Shen, Lanxian;  Yang, Peizhi;  Tu, Jielei 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Gallium arsenide  Gallium antimonide  Gallium antimonide/aluminum antimonide  Superlattices  Molecular beam epitaxy   Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文 thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230 Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan) 收藏  |  浏览/下载：41/0  |  提交时间：2010/12/28 Gallium Arsenide  Gallium antimonide  Gallium antimonide/Aluminum antimonide  Superlattices  Molecular Beam Epitaxy  VAPOR-PHASE EPITAXY  SURFACE-MORPHOLOGY  GROWTH  SUPERLATTICES  TEMPERATURE  RELAXATION  DETECTORS  GAAS(001)  MOCVD  FILMS   Multimode resonances in metallically confined square-resonator microlasers 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 5, 页码: art. no. 051104 Che KJ (Che Kai-Jun); Yang YD (Yang Yue-De); Huang YZ (Huang Yong-Zhen) 收藏  |  浏览/下载：185/14  |  提交时间：2010/04/13 aluminium compounds  finite difference time-domain analysis  gallium compounds  III-V semiconductors  indium compounds  laser cavity resonators  photolithography  refractive index  sputter etching  DIRECTIONAL EMISSION  MICRODISK LASERS  MODES   Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104 作者:  Zhu JJ;  Zhang SM;  Jiang DS;  Zhao DG;  Yang H 收藏  |  浏览/下载：191/56  |  提交时间：2010/03/08 aluminium compounds  claddings  gallium compounds  III-V semiconductors  indium compounds  quantum well lasers  refractive index  waveguide lasers   BCl3/Ar ICP etching of GaSb and related materials for quaternary antimonide laser diodes 期刊论文 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 卷号: 152, 期号: 5, 页码: G372-G374 Hong, T; Zhang, YG(张永刚）; Liu, TD; Zheng, YL 收藏  |  浏览/下载：11/0  |  提交时间：2012/03/24 III-V-SEMICONDUCTORS  ROOM-TEMPERATURE  CHEMISTRIES  ALGAAS  INAS  GAAS