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CORC

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Solid-state tellurium doping of AllnP and its application to photovoltaic devices grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 413, 页码: 5
作者:  Dai, P(代盼);  Tan, M(谭明);  Wu, YY(吴渊源);  Ji, L(季莲);  Bian, LF(边历峰)
收藏  |  浏览/下载：20/0  |  提交时间：2015/12/31
The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness 期刊论文
http://dx.doi.org/10.1063/1.4884063, 2014
Wu, Po-Hung; Huang, Ying-Sheng; Hsu, Hung-Pin; Li, Cheng; Huang, Shi-Hao; Tiong, Kwong-Kau; 李成
收藏  |  浏览/下载：4/0  |  提交时间：2015/07/22
Effect of a low-temperature thin buffer layer on the strain accommodation of in0.25ga0.75as grown on a gaas(001) substrate 期刊论文
Semiconductor science and technology, 2003, 卷号: 18, 期号: 11, 页码: 955-959
作者:  Zhang, ZC;  Chen, YH;  Yang, SY;  Zhang, FQ;  Ma, BS
收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12
Properties of InGaP/GaAs grown by solid-source molecular beam epitaxy with a GaP decomposition source 期刊论文
CHINESE PHYSICS LETTERS, 2003, 卷号: 20, 期号: 9, 页码: 1616
Shang, XZ; Niu, PJ; Wu, SD; Wang, WX; Guo, LW; Huang, Q; Zhou, JM
收藏  |  浏览/下载：9/0  |  提交时间：2013/09/24
Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate 期刊论文
semiconductor science and technology, 2003, 卷号: 18, 期号: 11, 页码: 955-959
作者:  Xu B
收藏  |  浏览/下载：73/0  |  提交时间：2010/08/12
Interference effects in differential reflectance spectra of the gaas epilayers grown on si substrate 期刊论文
Journal of applied physics, 1998, 卷号: 84, 期号: 11, 页码: 6466-6468
作者:  Zhao, MS;  Dai, ZX;  Li, GH;  Wang, RZ;  Jiang, DS
收藏  |  浏览/下载：12/0  |  提交时间：2019/05/12
Triclinic deformation and anisotropic strain relaxation of an inas film on a gaas(001) substrate measured by a series of symmetric double crystal x-ray diffraction 期刊论文
Journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 627-630
作者:  Wang, HM;  Zeng, YP;  Zhou, HW;  Kong, MY
收藏  |  浏览/下载：11/0  |  提交时间：2019/05/12
Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction 期刊论文
journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 627-630
Wang HM; Zeng YP; Zhou HW; Kong MY
收藏  |  浏览/下载：52/0  |  提交时间：2010/08/12
Interference effects in differential reflectance spectra of the GaAs epilayers grown on Si substrate 期刊论文
journal of applied physics, 1998, 卷号: 84, 期号: 11, 页码: 6466-6468
作者:  Jiang DS
收藏  |  浏览/下载：43/0  |  提交时间：2010/08/12
GaAs-InP heteroepitaxy and GaAs-InP MESFET fabrication by MOVPE 期刊论文
1997
Chen, S. Y.; Liu, B. L.; Wang, B. Z.; Huang, M. C.; Chen, L. H.; Chao, C.; 陈松岩
收藏  |  浏览/下载：4/0  |  提交时间：2013/12/12
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