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CORC

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Controllable III-V nanowire growth via catalyst epitaxy 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2017, 卷号: 5, 期号: 18, 页码: 4393-4399
作者:  Han, Ning;  Wang, Ying;  Yang, Zai-xing;  Yip, SenPo;  Wang, Zhou
收藏  |  浏览/下载：32/0  |  提交时间：2017/07/10
Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2017, 卷号: 171, 期号: 11, 页码: 118-122
作者:  Dai, P (Dai, Pan);  Ji, L (Ji, Lian);  Tan, M (Tan, Ming);  Uchida, S (Uchida, Shiro);  Wu, YY (Wu, Yuanyuan)
收藏  |  浏览/下载：30/0  |  提交时间：2017/11/30
Optical properties and band bending of ingaas/gaasbi/ingaas type-ii quantum well grown by gas source molecular beam epitaxy 期刊论文
Journal of applied physics, 2016, 卷号: 120, 期号: 10, 页码: 6
作者:  Pan, Wenwu;  Zhang, Liyao;  Zhu, Liang;  Li, Yaoyao;  Chen, Xiren
收藏  |  浏览/下载：29/0  |  提交时间：2019/05/09
Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate 期刊论文
materials science in semiconductor processing, 2016, 卷号: 42, 页码: 283-287
作者:  Lin, Tao;  Sun, Ruijuan;  Sun, Hang;  Guo, Enmin;  Duan, Yupeng
收藏  |  浏览/下载：14/0  |  提交时间：2016/01/11
VECSEL  MOVPE  InGaAs  
Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy 期刊论文
APPLIED PHYSICS EXPRESS, 2016, 卷号: 9, 期号: 1
作者:  Dai, P(代盼);  Lu, SL(陆书龙);  Uchida, SR;  Ji, L(季莲);  Wu, YY(吴渊渊)
收藏  |  浏览/下载：65/0  |  提交时间：2017/03/11
Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 55, 期号: 2
作者:  Wu, YY;  Ji, L(季莲);  Dai, P(代盼);  Tan, M(谭明);  Lu, SL(陆书龙)
收藏  |  浏览/下载：24/0  |  提交时间：2017/03/11
InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition 期刊论文
NANOTECHNOLOGY, 2016
Ji, Xianghai; Yang, Xiaoguang; Du, Wenna; Pan, Huayong; Luo, Shuai; Ji, Haiming; Xu, H. Q.; Yang, Tao
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 1
Barate, P; Liang, S; Zhang, TT; Frougier, J; Vidal, M; Renucci, P; Devaux, X; Xu, B; Jaffres, H; George, JM; Marie, X; Hehn, M; Mangin, S; Zheng, Y; Amand, T; Tao, B; Han, XF; Wang, Z; Lu, Y
收藏  |  浏览/下载：21/0  |  提交时间：2015/04/14
Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells 期刊论文
http://dx.doi.org/10.1016/j.tsf.2014.03.048, 2014
Kong, Lingmin; Sun, Wei; Feng, Zhe Chuan; Xie, Sheng; Zhou, Yunqing; Wang, Rui; Zhang, Cunxi; Zong, Zhaocun; Wang, Hongxia; Qiao, Qian; Wu, Zhengyun; 吴正云
收藏  |  浏览/下载：8/0  |  提交时间：2015/07/22
Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods 期刊论文
applied physics letters, 2014, 卷号: 105, 期号: 1, 页码: 012404
Barate, P; Liang, S; Zhang, TT; Frougier, J; Vidal, M; Renucci, P; Devaux, X; Xu, B; Jaffres, H; George, JM; Marie, X; Hehn, M; Mangin, S; Zheng, Y; Amand, T; Tao, B; Han, XF; Wang, Z; Lu, Y
收藏  |  浏览/下载：19/0  |  提交时间：2015/03/25

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