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浏览/检索结果: 共3条，第1-3条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects 期刊论文 ACTA MATERIALIA, 2020, 卷号: 186, 页码: 68-76 作者:  Geng, W. R.;  Tian, X. H.;  Jiang, Y. X.;  Zhu, Y. L.;  Tang, Y. L. 收藏  |  浏览/下载：8/0  |  提交时间：2021/02/02 BiFeO3 films  Oxygen vacancy plates  Charged domain wall pinning  Aberration-corrected scanning transmission electron microscopies  Phase field simulations   Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects 会议论文 作者:  Geng, W.R.;  Tian, X.H.;  Jiang, Y.X.;  Zhu, Y.L.;  Tang, Y.L. 收藏  |  浏览/下载：2/0  |  提交时间：2020/12/18 Bismuth compounds  Defects  Domain walls  Electric field measurement  Electronic states  Ferroelectric materials  Film growth  High resolution transmission electron microscopy  Interface states  Iron compounds  Modulation  Oxygen  Scanning electron microscopy  Thin films  TransmissionsAberration-corrected scanning transmission electron microscopies  BiFeO3 thin film  Charged domain wall  Electronics devices  Oxygen pressure  Phase-field simulation  Theoretical simulation  Vacancy Defects   Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects 期刊论文 Acta Materialia, 2020, 卷号: 186, 页码: 68-76 作者:  Geng, W.R.;  Tian, X.H.;  Jiang, Y.X.;  Zhu, Y.L.;  Tang, Y.L. 收藏  |  浏览/下载：2/0  |  提交时间：2020/11/14 Bismuth compounds  Defects  Domain walls  Electric field measurement  Electronic states  Ferroelectric materials  Film growth  High resolution transmission electron microscopy  Interface states  Iron compounds  Modulation  Oxygen  Scanning electron microscopy  Thin films  Transmissions  Aberration-corrected scanning transmission electron microscopies  BiFeO3 thin film  Charged domain wall  Electronics devices  Oxygen pressure  Phase-field simulation  Theoretical simulation  Vacancy Defects