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Strain effects on the behavior of intrinsic point defects within the GaN/AlN interface
期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS C, 2022
作者:
Yang, Yuming
;
Zhang, Xuemei
;
Liu, Jun
;
Zhang, Chuanguo
;
Li, Yonggang
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2022/12/23
GaN
AlN interface
strain effects
intrinsic point defects
first-principles calculations
diffusion barrier
Guanidinium-assisted crystallization modulation and reduction of open-circuit voltage deficit for efficient planar FAPbBr3 perovskite solar cells
期刊论文
CHEMICAL ENGINEERING JOURNAL, 2022, 卷号: 437
作者:
Xu, Huifen
;
Liang, Zheng
;
Ye, Jiajiu
;
Xu, Shendong
;
Wang, Zihan
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2022/05/16
Wide-bandgap perovskites
Pure-bromide perovskite solar cells
Non-radiative recombination
Open-circuit voltage loss
The effect of charged defects on the stability of implanted helium and yttrium in cubic ZrO2: a first-principles study
期刊论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2021, 卷号: 23, 期号: 45, 页码: 25727-25735
作者:
Wang, Yinlong
;
Wang, Canglong
;
He, Wenhao
;
Meng, Zhaocang
;
Yan, Shan
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  |  
浏览/下载:17/0
  |  
提交时间:2021/12/13
First principles investigation of intrinsic and Na defects in XTe (X=Ca, Sr, Ba) nanostructured PbTe
期刊论文
MATERIALS TODAY PHYSICS, 2021, 卷号: 19
作者:
Zhang, Xuemei
;
Toriyama, Michael Y.
;
Male, James P.
;
Feng, Zhenzhen
;
Guo, Shuping
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2021/08/30
Thermoelectric
Point defect
Solid solution
Pseudo-interface
PbTe compounds
Single Au atom supported defect mediated boron nitride monolayer as an efficient catalyst for acetylene hydrochlorination: A first principles study
期刊论文
MOLECULAR CATALYSIS, 2021, 卷号: 511, 页码: 9
作者:
Ali, Sajjad
;
Haneef, Muhammad
;
Akbar, Jehan
;
Ullah, Izaz
;
Ullah, Sami
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2021/11/22
Defects
hexagonal boron nitride
single Au catalyst
acetylene hydrochlorination
DFT
Point Defects in Monolayer h-AlN as Candidates for Single-Photon Emission
期刊论文
ACS Applied Materials and Interfaces, 2021, 卷号: 13, 期号: 31, 页码: 37380-37387
作者:
Z. Shi
;
Z. Qi
;
H. Zang
;
K. Jiang
;
Y. Chen
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  |  
浏览/下载:2/0
  |  
提交时间:2022/06/13
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
期刊论文
ACTA MATERIALIA, 2020, 卷号: 186, 页码: 68-76
作者:
Geng, W. R.
;
Tian, X. H.
;
Jiang, Y. X.
;
Zhu, Y. L.
;
Tang, Y. L.
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  |  
浏览/下载:8/0
  |  
提交时间:2021/02/02
BiFeO3 films
Oxygen vacancy plates
Charged domain wall pinning
Aberration-corrected scanning transmission electron microscopies
Phase field simulations
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
会议论文
作者:
Geng, W.R.
;
Tian, X.H.
;
Jiang, Y.X.
;
Zhu, Y.L.
;
Tang, Y.L.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/12/18
Bismuth compounds
Defects
Domain walls
Electric field measurement
Electronic states
Ferroelectric materials
Film growth
High resolution transmission electron microscopy
Interface states
Iron compounds
Modulation
Oxygen
Scanning electron microscopy
Thin films
TransmissionsAberration-corrected scanning transmission electron microscopies
BiFeO3 thin film
Charged domain wall
Electronics devices
Oxygen pressure
Phase-field simulation
Theoretical simulation
Vacancy Defects
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
期刊论文
Acta Materialia, 2020, 卷号: 186, 页码: 68-76
作者:
Geng, W.R.
;
Tian, X.H.
;
Jiang, Y.X.
;
Zhu, Y.L.
;
Tang, Y.L.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/11/14
Bismuth compounds
Defects
Domain walls
Electric field measurement
Electronic states
Ferroelectric materials
Film growth
High resolution transmission electron microscopy
Interface states
Iron compounds
Modulation
Oxygen
Scanning electron microscopy
Thin films
Transmissions
Aberration-corrected scanning transmission electron microscopies
BiFeO3 thin film
Charged domain wall
Electronics devices
Oxygen pressure
Phase-field simulation
Theoretical simulation
Vacancy Defects
A synchronous defect passivation strategy for constructing high-performance and stable planar perovskite solar cells
期刊论文
Chemical Engineering Journal, 2020, 页码: 10
作者:
Y. Sun,Z. Pang,Y. Quan,D. Han,X. Zhang,X. Ge,F. Wang,Y. Sun,J. Yang and L. Yang
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  |  
浏览/下载:5/0
  |  
提交时间:2021/07/06
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