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Method for obtaining junction temperature of power semiconductor devices combining computational fluid dynamics and thermal network
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2020, 卷号: 976, 页码: 10
作者:
Peng, Lisha
;
Shen, Wanzeng
;
Feng, Anhui
;
Liu, Yan
;
Gao, Daqing
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/12/09
IGBT module
Junction temperature
Thermal network
CFD simulation
Cold plate
Assessing electric vehicle inverter to reduce energy consumption: using insulated gate bipolar transistor module to prevent the power loss and junction temperature
期刊论文
JOURNAL OF CLEANER PRODUCTION, 2019, 卷号: 224, 页码: 60-71
作者:
Li, Ling-Ling
;
Chang, Ji-Dong
;
Wu, Kuo-Jui
;
Tseng, Ming-Lang
;
Li, Zhi-Gang
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  |  
浏览/下载:5/0
  |  
提交时间:2019/12/02
Electric vehicle
Insulated gate bipolar transistor module
Switching cycle
Average power loss
Junction temperature
An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802
作者:
Jun Wang
;
Shiwei Liang
;
Linfeng Deng
;
Xin Yin
;
Z. John Shen
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  |  
浏览/下载:9/0
  |  
提交时间:2019/12/13
Silicon carbide
Predictive models
Spontaneous emission
Junctions
SPICE
Temperature
Numerical models
Bipolar junction transistor (BJT)
proportional base driver
SPICE model
surface recombination effect
4H-SiC
An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect
期刊论文
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802
作者:
Wang, J
;
Liang, SW
;
Deng, LF
;
Yin, X
;
Shen, ZJ
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  |  
浏览/下载:2/0
  |  
提交时间:2019/12/17
Bipolar junction transistor (BJT)
proportional base driver
SPICE model
surface recombination effect
4H-SiC
An Improved SPICE Model of SiC BJT Incorporating Surface Recombination Effect.
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.7, 页码: 6794-6802
作者:
Wang, J
;
Liang, SW
;
Deng, LF
;
Yin, X
;
Shen, ZJ
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/17
4H-SiC
Bipolar junction transistor (BJT)
Junctions
Numerical models
Predictive models
proportional base driver
Silicon carbide
SPICE
SPICE model
Spontaneous emission
surface recombination effect
Temperature
An Improved Proportional Base Driver for Minimizing Driver Power Consumption of SiC BJT Over Wide Current and Temperature Range
期刊论文
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2019, 卷号: Vol.7 No.3, 页码: 1727-1735
作者:
Liang, SW
;
Wang, J
;
Deng, LF
;
Shi, YZ
;
Yin, X
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/17
4H-SiC
bipolar junction transistor (BJT)
boost converter
driver loss
gate driver
Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor
期刊论文
ELECTRONICS, 2019, 卷号: 8, 期号: 6, 页码: 1-8
作者:
Liu, MH (Liu, Mohan)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1 ]
;
Li, XL (Li, Xiaolong)[ 1 ]
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2020/04/03
saturation effect
gain degradation
total ionizing dose
gamma ray
bipolar transistor
Experimental studies of collector-emitter voltage bias influence on the total ionization dose effects in NPN Si BJTs
期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 194-202
作者:
Lawal, Olarewaju Mubashiru
;
Liu, Shuhuan
;
Li, Zhuoqi
;
Yang, JiangKun
;
Hussain, Aqil
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/11/19
Total ionization dose effects
Excess base current
Ideality factor
Collector-emitter voltage bias conditions
Power dissipation
Bipolar junction transistor
Sustainable energy saving: A junction temperature numerical calculation method for power insulated gate bipolar transistor module
期刊论文
2018, 卷号: 185, 页码: 198-210
作者:
Li, Ling-Ling[1]
;
Zhang, Xin-Bao[1]
;
Tseng, Ming-Lang[2]
;
Lim, Ming[3]
;
Han, Ye[1]
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/11/30
Exploring the Electro-Thermal Parameters of Reliable Power Modules: Insulated Gate Bipolar Transistor Junction and Case Temperature
期刊论文
ENERGIES, 2018, 卷号: 11
作者:
Liu, Bo-Ying
;
Wang, Gao-Sheng
;
Tseng, Ming-Lang
;
Wu, Kuo-Jui
;
Li, Zhi-Gang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/02
insulated gate bipolar transistor power module
power thermal cycling test
electro-thermal parameters
junction temperature
case temperature
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