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一种VCSEL芯片制备方法 专利
专利号: CN110190514A, 申请日期: 2019-08-30, 公开日期: 2019-08-30
作者:  田宇;  韩效亚;  吴真龙;  杜石磊
收藏  |  浏览/下载：15/0  |  提交时间：2019/12/30
Ultra long lifetime gallium arsenide 专利
专利号: US9704706, 申请日期: 2017-07-11, 公开日期: 2017-07-11
作者:  SCHUNEMANN, PETER G.;  ZAWILSKI, KEVIN T.
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/24
基因工程菌与生物质联合强化土壤中砷挥发研究 学位论文
北京: 中国科学院生态环境研究中心, 2017
作者:  陈 鹏
收藏  |  浏览/下载：23/0  |  提交时间：2018/06/22
Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate 期刊论文
materials science in semiconductor processing, 2016, 卷号: 42, 页码: 283-287
作者:  Lin, Tao;  Sun, Ruijuan;  Sun, Hang;  Guo, Enmin;  Duan, Yupeng
收藏  |  浏览/下载：14/0  |  提交时间：2016/01/11
VECSEL  MOVPE  InGaAs  
Research on the high indium content InGaAs multiple quantum wells wafers for lambda > 1.55 mu m laser diodes 期刊论文
journal of alloys and compounds, 2015, 卷号: 631, 页码: 283-287
作者:  Lin, Tao;  Sun, Hang;  Zhang, Haoqing;  Wang, Yonggang;  Lin, Nan
收藏  |  浏览/下载：18/0  |  提交时间：2015/07/15
Laser diode  MOCVD  GaAs  InP  
半导体层及其制造方法以及激光器二极管及其制造方法 专利
专利号: CN101867156B, 申请日期: 2013-12-11, 公开日期: 2013-12-11
作者:  城岸直辉;  荒木田孝博
收藏  |  浏览/下载：16/0  |  提交时间：2019/12/26
一种对红光半导体激光器进行Zn扩散的方法 专利
专利号: CN103368072A, 申请日期: 2013-10-23, 公开日期: 2013-10-23
作者:  张新;  徐现刚;  张雨;  吴德华;  夏伟
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/31
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：36/0  |  提交时间：2014/05/15
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
水稻土中微生物介导的铁膜分解和砷迁移转化研究 学位论文
博士, 北京: 中国科学院研究生院, 2012
黄海
收藏  |  浏览/下载：81/0  |  提交时间：2014/05/06

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