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长春光学精密机械与... [15]
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专题:长春光学精密机械与物理研究所
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808 nm激发的上转换纳米粒子的合成及生物应用
学位论文
博士: 中国科学院大学, 2015
作者:
王丹
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浏览/下载:434/0
  |  
提交时间:2015/11/30
808 nm激发
IR-806
上转换纳米粒子
光动力治疗
Nd3+敏化
生物成像
上转换发光
核壳结构
高峰值功率808nm垂直腔面发射激光器列阵
期刊论文
发光学报, 2014, 期号: 9, 页码: 1098-1103
张金胜
;
刘晓莉
;
崔锦江
;
宁永强
;
朱洪波
;
张金龙
;
张星
;
王立军
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  |  
浏览/下载:28/0
  |  
提交时间:2015/04/17
高峰值功率
808 nm
垂直腔面发射激光器
列阵
808nm垂直腔面发射激光器列阵的温度特性分析
期刊论文
发光学报, 2013, 期号: 12, 页码: 1636-1640
张金胜
;
宁永强
;
张金龙
;
张建伟
;
张建
;
王立军
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  |  
浏览/下载:73/0
  |  
提交时间:2014/03/07
808 nm
垂直腔面发射激光器
列阵
温漂特性
Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE)
会议论文
2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China
Liang X.
;
Wang L.
;
Ning Y.
;
Liu Y.
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  |  
浏览/下载:16/0
  |  
提交时间:2013/03/25
920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method
self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode
the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1
2 and 3) in one period
QW depth
barrier width
the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis
we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device
the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications
Switzerland.
基于LPC2148的808nm大功率半导体激光治疗仪
期刊论文
应用科技, 2012, 期号: 01, 页码: 31-34
王彪
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浏览/下载:22/0
  |  
提交时间:2013/03/11
LPC2148
808nm大功率激光器
半导体激光治疗仪
KW-output high beam quality diode laser array source (EI CONFERENCE)
会议论文
2012 International Conference on Optoelectronics and Microelectronics, ICOM 2012, August 23, 2012 - August 25, 2012, Changchun, China
Shan X.
;
Zhang J.
;
Peng H.
;
Fu X.
;
Liu Y.
;
Wang L.
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  |  
浏览/下载:21/0
  |  
提交时间:2013/03/25
With the advantages of small volume
light weight
high efficiency and long lifespan
diode laser has been widely applied to industrial processing. Presently
for laser used as processing light source needs to amount to dozens of KW per cm2 of power density
how to increase power output and get smaller light spot for diode laser becomes a key problem. It is introduced that by designing beam shaping by ourselves and making use of optical system for beam blooming and focusing
808nm laser array composed of 20 bars eventually achieves the 1001.5w power output
coupling efficiency at 90%
11mm2 of light spot through experiments
which enables diode laser to be directly applied to cladding
welding and so on. 2012 IEEE.
808nm high-power semiconductor laser therapeutic apparatus based on LPC2138 (EI CONFERENCE)
会议论文
2011 IEEE International conference on Intelligent Computation and Bio-Medical Instrumentation, ICBMI 2011, December 14, 2011 - December 17, 2011, Wuhan, Hubei, China
Wang B.
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浏览/下载:24/0
  |  
提交时间:2013/03/25
In this paper
we designed an intelligent 808nm high-power semiconductor laser therapeutic apparatus with the LPC2138 ARM processor. The laser is driven by the digital constant current source module
and the apparatus has good human-machine interaction performance on account of set the parameters intelligently. The function such as operation mode
output power
output pulse width and pulse cycle could be easily set through the TFT touch screen. The application software could transmission the log data to the computer by the USB interface in order to check and study the records later. 2011 IEEE.
Analysis of laser jamming to satellite-based detector (EI CONFERENCE)
会议论文
International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging, June 17, 2009 - June 19, 2009, Beijing, China
Wang S.-W.
;
Guo L.-H.
;
Guo R.-H.
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  |  
浏览/下载:16/0
  |  
提交时间:2013/03/25
The reconnaissance satellite
communication satellite and navigation satellite used in the military applications have played more and more important role in the advanced technique wars and already become the significant support and aid system for military actions. With the development of all kinds of satellites
anti-satellite laser weapons emerge as the times require. The experiments and analyses of laser disturbing CCD (charge coupled detector) in near ground have been studied by many research groups
but their results are not suitable to the case that using laser disturbs the satellite-based detector. Because the distance between the satellite-based detector and the ground is very large
it is difficult to damage it directly. However the optical receive system of satellite detector has large optical gain
so laser disturbing satellite detector is possible. In order to determine its feasibility
the theoretical analyses and experimental study are carried out in the paper. Firstly
the influence factors of laser disturbing satellite detector are analyzed in detail
which including laser power density on the surface of the detector after long distance transmission
and laser power density threshold for disturbing etc. These factors are not only induced by the satellite orbit
but dependence on the following parameters: laser average power in the ground
laser beam quality
tracing and aiming precision and atmospheric transmission. A calculation model is developed by considering all factors which then the power density entering into the detector can be calculated. Secondly
the laser disturbing experiment is performed by using LD (laser diode) with the wavelength 808 nm disturbing CCD 5 kilometer away
which the disturbing threshold value is obtained as 3.5510-4mW/cm2 that coincides with other researcher's results. Finally
using the theoretical model
the energy density of laser on the photosensitive surface of MSTI-3 satellite detector is estimated as about 100mW/cm2
which is largely exceed the disturbing threshold and therefore verify the feasibility of using this kind of laser disturbing the satellite-based detector. According to the results. using the similar laser power density absolutely saturate the requirements to laser disturbing satellite-based detector. If considering the peak power of pulsed laser
even decrease laser average power
it is also possible to damage the detector. This result will provide the reliable evidences to evaluate the effect of laser disturbing satellite-based detector. 2009 SPIE.
High power diode laser with beam coupling (EI CONFERENCE)
会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Gu Y.
;
Wang L.
;
Feng G.
;
Shan X.
;
Yin H.
;
Liu Y.
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  |  
浏览/下载:52/0
  |  
提交时间:2013/03/25
As the increasing applications of the semiconductor lasers in the laser processing
the single 2-D stack optic-power density has not satisfied the actual requirements. It demands to couple several diode laser stack beams to one to improve the brightness
and it becomes the central issue to adopt the appropriate beam coupling technology which would offer high quality and high efficiency. In this paper
it mainly introduces the beam shaping and the technology of spatial coupling
polarization coupling
and wavelength coupling. The coupling key elements are presented and indicated. Finally
the development of the diode laser on beam coupling in our country fell behind through analyzing the statement of the world. Our lab is studying on polarization coupling and wavelength coupling. We gain some results by phase
which the polarization coupling efficiency can achieve 90% for two LD stacks with seven bars whose luminous wavelength is 975nm and980nm.By two 808nm diode laser coupling
the efficiency of 60% can be achieved after focusing to the beam size of 22mm2. 2008 SPIE.
Vertical-external-cavity surface-emitting lasers: Numerical simulation, and characterization (EI CONFERENCE)
会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Yan C.
;
He C.
;
Lu G.
;
Qin L.
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  |  
浏览/下载:16/0
  |  
提交时间:2013/03/25
Firstly
the vertical external-cavity surface-emiting lasers (VECSELs) device structure and model was given
and the output characteristic was simple calculated. Then
in experiment
the VECSELs were grown
bonded on to the heat sink
and optically pumped by high-power 808nm diode laser array with fiber output module
the light emission spectra were measured. Finally
The thermal characteristic of the VECSELs was investigated by changing the temperature of the substrate. 2008 SPIE.
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