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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics 会议论文 ieee photonicsglobal at singapore, singapore, singapore, dec 08-11, 2008 Wang, LS; Zhao, LJ; Pan, JQ; Zhang, W; Wang, H; Liang, S; Zhu, HL; Wang, W 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/09 P-I-N/HBT  WAVE-GUIDE  INP/INGAAS  FREQUENCY  HBT   On the performance analysis and design of a novel shared-layer integrated devices using RCE-p-i-n-PD/SHBT - art. no. 67820J 会议论文 conference on optoelectronic materials and devices ii, wuhan, peoples r china, nov 02-05, 2007 Shou-Li Z; De-Ping X; Ya-Li I; Hai-Lin C; Yin-Zhe C; Ang M; Ji-He L; Jun-Hua G 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 RCE- p-i-n-PD   Ultraviolet electroluminescence of ZnO based heterojunction light emitting diode (EI CONFERENCE) 会议论文 12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland Jiao S. J.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Li B. H.; Zhang J. Y.; Yao B.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 ZnO/GaN p-i-n heterojunctions light emitting diodes were fabricated by plasma-assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n-ZnO/i-ZnO/p-GaN heterojunction light emitting diode. The emission of i-ZnO was obtained due to the limitation effect of i-ZnO on electrons and holes. Moreover  n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was also fabricated. The limitation effect on electrons is increased in this heterojunction. The bright ultraviolet electroluminescence at 382 nm originating from the ZnO layer was observed in the room temperature electroluminescence spectrum. We hope to realize the stimulated emission of ZnO using these heterojunctions by the improvement of crystal quality and the optimization of device structure. 2006 WILEY-VCH Verlag GmbH Co. KGaA.   非对称晶闸管的设计考虑及Ｎ＃+[+] 层的制作 会议论文 中国电工技术学会电力电子学第五次学术会议, 成都, 1993-05-26 作者:  肖浦英;  高玉民 收藏  |  浏览/下载：0/0  |  提交时间：2019/12/25 晶闸管  结构设计  P-I-N二极管  扩散