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Effects of Reclaimed Water and C and N on Breakthrough Curves in Sandy Soil and Loam 会议论文
作者:  Shang, Fangze;  Ren, Shumei;  Yan, Lei;  Zhang, Chong;  Wu, Ganlin
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/05
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H.
收藏  |  浏览/下载:20/0  |  提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Fatigue Behaviour of Woven Composite pi Joint 会议论文
FATIGUE BEHAVIOUR OF FIBER REINFORCED POLYMERS: EXPERIMENTS AND SIMULATIONS, 2012-01-01
作者:  Zhang, J.;  Fu, Y.;  Zhao, L.;  Liang, X.;  Huang, H.
收藏  |  浏览/下载:3/0  |  提交时间:2020/01/06
Synthesis of carbon-encapsulated magnetic nanoparticles by a grain-boundary-reaction 会议论文
Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing Symposium (Mater. Res. Soc. Symposium Proceedings Vol.776), Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing Symposium, San Francisco, CA, USA, INSPEC
Qixiang Wang; Guoqing Ning; Fei Wei; Guohua Luo
收藏  |  浏览/下载:2/0
Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:26/0  |  提交时间:2013/03/25
High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.  


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