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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM 会议论文 IEEE/IFIP International Conference on VLSI and System-on-Chip, VLSI-SoC, 2018-10-08 作者:  Deng, E.;  Wang, Z.;  Kang, W.;  Wei, S.;  Zhao, W. 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/30 CMOS integrated circuits  Magnetic devices  Magnetic recording  NAND circuits  Standby power systems  Torque  Tunnel junctions  VLSI circuits  Computing system  Magnetic tunnel junction  Non-volatile flip-flops  Spin orbits  Spin transfer torque  Spintronics device  Switching delay  Switching power  Flip flop circuits   Emerging Spintronic Devices: From Ultra-High-Density Memory to Logic-In-Memory 会议论文 Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018, 2018-11-21 作者:  Zhang, Yue;  Wang, Guanda;  Huang, Zhe;  Zhang, Zhizhong;  Wang, Jinkai 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/30 CMOS integrated circuits  Data storage equipment  Magnetic devices  Metals  MOS devices  Oxide semiconductors  Semiconductor junctions  Spintronics  Tunnel junctions  Complementary metal oxide semiconductors  Logic applications  Logic in memory  Magnetic tunnel junction  Non-volatile memory  Spintronic device  Systematic study  Ultrahigh density  Computer circuits   All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron 会议论文 IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, PORTUGAL, 2016-08-01 作者:  Zhang, Deming;  Zeng, Lang;  Cao, Kaihua;  Wang, Mengxing;  Peng, Shouzhong 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/30 All Spin Artificial Neural Network (ASANN)  artificial synaptic device  compound spintronic device  magnetic tunnel junction (MTJ)  post-CMOS non-volatile memory (NVM) technologies  resistive RAM (RRAM)