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A novel fast lock-in phase-locked loop frequency synthesizer with direct frequency presetting circuit 期刊论文
japanese journal of applied physics part 1-regular papers brief communications & review papers, 2006, 卷号: 45, 期号: 4b, 页码: 3290-3294
Kuang XF; Wu NJ; Shou GL
收藏  |  浏览/下载:63/0  |  提交时间:2010/04/11
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文
1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003
Leung BH; Fong WK; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载:22/0  |  提交时间:2010/10/29
Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文
ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318
Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK
收藏  |  浏览/下载:129/0  |  提交时间:2010/08/12
Studies of high DC current induced degradation in III-V nitride based heterojunctions 期刊论文
ieee transactions on electron devices, 2000, 卷号: 47, 期号: 7, 页码: 1421-1425
Ho WY; Surya C; Tong KY; Lu LW; Ge WK
收藏  |  浏览/下载:38/0  |  提交时间:2010/08/12


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