×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [48]
内容类型
期刊论文 [39]
会议论文 [9]
发表日期
2012 [1]
2011 [9]
2010 [9]
2009 [2]
2008 [4]
2007 [3]
更多...
学科主题
光电子学 [48]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共48条,第1-10条
帮助
限定条件
学科主题:光电子学
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells
期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 23, 页码: 231108
Liu Z (Liu, Zhi)
;
Hu WX (Hu, Weixuan)
;
Li C (Li, Chong)
;
Li YM (Li, Yaming)
;
Xue CL (Xue, Chunlai)
;
Li CB (Li, Chuanbo)
;
Zuo YH (Zuo, Yuhua)
;
Cheng BW (Cheng, Buwen)
;
Wang QM (Wang, Qiming)
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2013/03/20
LIGHT-EMITTING-DIODES
GE
SI
SILICON
GAIN
GAP
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117
作者:
Yang H
;
Zhu JH
;
Wang H
;
Zhang SM
;
Yang H
收藏
  |  
浏览/下载:48/3
  |  
提交时间:2011/07/05
DIODES
EFFICIENCY
Photonic integrated technology for multi-wavelength laser emission
期刊论文
chinese science bulletin, 2011, 卷号: 56, 期号: 28-29, 页码: 3064-3071
Chen XF
;
Liu W
;
An JM
;
Liu Y
;
Xu K
;
Wang X
;
Liu JG
;
Ji YF
;
Zhu NH
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2012/02/06
EQUIVALENT-CHIRP TECHNOLOGY
IMPRINT LITHOGRAPHY
DFB LASER
PERFORMANCE
MODULATOR
CIRCUITS
DIODES
SCALE
ARRAY
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging
期刊论文
applied physics letters, 2011, 卷号: 99, 期号: 11, 页码: 113115
Zhu JH
;
Ning JQ
;
Zheng CC
;
Xu SJ
;
Zhang SM
;
Yang H
收藏
  |  
浏览/下载:71/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
LASER-DIODES
GAN
NANOWIRES
Frequency drift and instantaneous linewidth broadening of phase-section tuned SG-DBR laser
期刊论文
optics communications, 2011, 卷号: 284, 期号: 5, 页码: 1312-1317
作者:
Wang LX
;
Ke JH
收藏
  |  
浏览/下载:60/2
  |  
提交时间:2011/07/05
Frequency drift
Instantaneous linewidth
Sampled-grating distributed Bragg reflector laser
SEMICONDUCTOR-LASERS
WAVELENGTH
PHOTODETECTORS
PERFORMANCE
DIODES
Improved performance of UV-LED by p-AlGaN with graded composition
期刊论文
physica status solidi(c) current topics in solid state physics, 2011, 卷号: 8, 期号: 2, 页码: 461-463
Yan, Jianchang
;
Wang, Junxi
;
Cong, Peipei
;
Sun, Lili
;
Liu, Naixin
;
Liu, Zhe
;
Zhao, Chao
;
Li, Jinmin
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Diffraction
Electroluminescence
Gallium
Metallorganic chemical vapor deposition
Organic chemicals
Organic light emitting diodes(OLED)
Organometallics
Structure(composition)
Ultraviolet radiation
X ray diffraction
A practical route towards fabricating GaN nanowire arrays
期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ
;
Huang, J
;
Gong, XJ
;
Wang, JF
;
Xu, K
;
Qiu, YX
;
Cai, DM
;
Zhou, TF
;
Ren, GQ
;
Yang, H
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
EPITAXIAL LATERAL OVERGROWTH
CHEMICAL-VAPOR-DEPOSITION
WELL NANOROD ARRAYS
ULTRAVIOLET-LIGHT
GROWTH
NANOGENERATORS
DISLOCATIONS
BRIGHTNESS
LAYERS
Schottky barrier light emitting diode in standard CMOS technology
期刊论文
group iv photonics (gfp), 2011 8th ieee international conference on, 2011, 页码: 296-298
Huang, Beiju
;
Wang, Wei
;
Dong, Zan
;
Zhang, Zanyun
;
Guo, Weilian
;
Chen, Hongda
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2012/06/13
CMOS integrated circuits
Diodes
Light
Light emission
Photonics
Schottky barrier diodes
Semiconducting silicon compounds
Semiconductor diodes
Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18503
作者:
Dong Z
;
Huang BJ
收藏
  |  
浏览/下载:50/2
  |  
提交时间:2011/07/05
optoelectronic integrated circuit
complementary metal-oxide-semiconductor technology
silicon-based light emitting device
electroluminescence
AVALANCHE BREAKDOWN
PHOTON-EMISSION
CURRENT-DENSITY
DIODES
MODEL
ELECTROLUMINESCENCE
SUPERLATTICES
EFFICIENCY
JUNCTIONS
LEDS
A new method to measure the carrier concentration of p-GaN
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804
Zhou M
;
Zhao DG
收藏
  |  
浏览/下载:66/7
  |  
提交时间:2011/07/05
p-GaN
carrier concentration measurement
ultraviolet photodetector
LASER-DIODES
FILMS
©版权所有 ©2017 CSpace - Powered by
CSpace