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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Cu-doped CdS and its application in CdTe thin film solar cell 期刊论文 AIP Advances, 2016, 卷号: 6, 期号: 1, 页码: 015203 作者:  Deng, Yi;  Yang, Jun;  Yang, Ruilong;  Shen, Kai;  Wang, Dezhao 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/04 annealing, cadmium compounds, copper, electrical conductivity, electron-hole recombination, II-VI semiconductors, photoluminescence, p-n junctions, radiation quenching, recrystallisation, semiconductor doping, semiconductor thin films, solar cells, surface states, thin film devices, wide band gap semiconductors   Prospects of Zn(O,S) as an alternative buffer layer for Cu2ZnSnS4 thin-film solar cells from numerical simulation 期刊论文 MICRO & NANO LETTERS, 2016, 卷号: 11, 页码: 386-390 作者:  Zhang, Hong;  Cheng, Shuying;  Yu, Jinling;  Zhou, Haifang;  Jia, Hongjie 收藏  |  浏览/下载：8/0  |  提交时间：2019/11/21 donor concentration  thin film devices  aluminium  semiconductor thin films  Cu2ZnSnS4-Zn(OS)-ZnO:Al  thin-film solar cells  zinc compounds  buffer layer  buffer layers  capacitance  doping concentration  numerical simulation  doping profiles  wide band gap semiconductors  solar cell capacitance simulator  temperature coefhcient of efhciency  acceptor concentration  solar cells  II-VI semiconductors  copper compounds  tin compounds   Mechanoluminescence properties of Mn2+-doped BaZnOS phosphor (EI收录SCI收录) 期刊论文 Journal of Materials Chemistry C, 2016, 卷号: 4, 页码: 8166-8170 作者:  Li, Lejing[1];  Wong, Ka-Leung[2];  Li, Pengfei[1];  Peng, Mingying[1] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/24 Compressive stress  Energy gap  Triboluminescence  Wide band gap semiconductors   Immobilisation of TiO2 films on activated carbon fibres by a hydrothermal method for photocatalytic degradation of toluene 期刊论文 MICRO & NANO LETTERS, 2016, 卷号: 11, 期号: 9, 页码: 539-544 作者:  Liang, Peng;  Wei, Aifang;  Zhang, Yaqing;  Wu, Jiafeng;  Zhang, Xiwang 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/16 titanium compounds  wide band gap semiconductors  semiconductor thin  films  activated carbon  carbon fibres  composite materials  photochemistry  catalysis  crystal structure  X-ray diffraction  scanning electron microscopy  ultraviolet spectra  visible spectra  X-ray photoelectron spectra  materials preparation  titania film  immobilisation  photocatalytic toluene degradation  degradation  efficiency  volatile organic compound concentrations  impregnation-hydrothermal method  crystal structure  surface area  optical absorption properties  chemical composition  X-ray diffraction  XRD  Brunauer-Emmett-Teller analysis  scanning electron microscopy  SEM  ultraviolet-visible absorption spectroscopy  X-ray photoelectron  spectroscopy  XPS  hydrothermal temperature  illumination time  space  velocity  light intensity  pollutant  thin film  activated carbon fibre  surface  crystallinity  hydroxyl group content  composite material  regeneration  energy efficiency  reaction conditions  temperature 180  degC  time 3 h  power 32 W  C-TiO2