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Red-shift in the InGaAsP/GaInP active region using impurity free vacancy diffusion induced quantum well intermixing 期刊论文
2015, 卷号: 644, 页码: 398-403
作者:  Lin, Tao;  Zhang, Haoqing;  Sun, Ruijuan;  Duan, Yupeng;  Lin, Nan
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/20
Research on the high indium content InGaAs multiple quantum wells wafers for lambda > 1.55 mu m laser diodes 期刊论文
2015, 卷号: 631, 页码: 283-287
作者:  Lin, Tao;  Sun, Hang;  Zhang, Haoqing;  Wang, Yonggang;  Lin, Nan
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/20
Laser diode  MOCVD  GaAs  InP  
Research of new structure super fast recovery power diode 会议论文
PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON MECHATRONICS, MATERIALS, CHEMISTRY AND COMPUTER ENGINEERING 2015 (ICMMCCE 2015), 2015-01-01
作者:  Ma, Li;  Chen, Linnan;  Gao, Yong
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/20
Study of N ions implantation induced quantum well intermixing in GaInP/AlGaInP quantum well structures 期刊论文
2015, 卷号: 650, 页码: 336-341
作者:  Lin, Tao;  Zhang, Haoqing;  Guo, Enmin;  Sun, Ruijuan;  Duan, Yupeng
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/20
QWI  Laser diode  Blue-shift  AFM  XPS  
Impurity free vacancy diffusion induced quantum well intermixing based on hafnium dioxide films 期刊论文
2015, 卷号: 29, 页码: 150-154
作者:  Lin, Tao;  Zhang, Haoqing;  Sun, Hang;  Yang, Chen;  Lin, Nan
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/20


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