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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 发表日期：2009    内容类型：其他     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs 其他 2009-01-01 He, Jin; Zhang, Lining; Zhang, Jian; Ma, Chenyue; Liu, Feilong; Chan, Mansun 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10 non-classical MOS transistor  surrounding-gate MOSFETs  device physics  surface potential model  non-charge-sheet approximation  MOS-TRANSISTOR  CHARGE  PERFORMANCE   A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs 其他 2009-01-01 He, Jin; Zhang, Lining; Zheng, Rui; Zhang, Jian; Chan, Mansun 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 non-classical CMOS  surface potential  DG-MOSFETs  device physics  compact modelling  ULSI circuit simulation  DRAIN-CURRENT  DG MOSFETS  CHARGE  MODEL  EQUATION  NONEQUILIBRIUM  APPROXIMATION  TRANSISTORS  CAPACITANCE  VOLTAGE   Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics 其他 2009-01-01 Song, Yan; Zhang, Lining; Zhang, Jian; Zhou, Xingye; Che, Yuchi; He, Jin; Chan, Mansun 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 non-classical MOS transistor  double-gate MOSFETs  device physics  surface potential model  computation efficiency  DOUBLE-GATE MOSFETS  SOI MOSFETS  CHARGE