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Growth and electrical characterization of type II InAs/GaSb superlattices for midwave infrared detection 期刊论文
infrared physics & technology, 2014, 卷号: 65, 页码: 129-133
Zhang, LX; Sun, WG; Xu, YQ; Zhang, L; Zhang, L; Si, JJ
收藏  |  浏览/下载:9/0  |  提交时间:2015/03/25
Valley polarization in graphene-silicene-graphene heterojunction in zigzag nanoribbon 期刊论文
journal of applied physics, 2014, 卷号: 115, 期号: 23, 页码: 233702
Shen, M; Zhang, YY; An, XT; Liu, JJ; Li, SS
收藏  |  浏览/下载:14/0  |  提交时间:2015/04/02
Electronic Structures of Carbon-Based Kagome Lattices 期刊论文
chinese physics letters, 2014, 卷号: 31, 期号: 2, 页码: 028102
Zhang, D; Lin, LZ; Zhu, JJ
收藏  |  浏览/下载:14/0  |  提交时间:2015/03/19
Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap 期刊论文
nano research, 2014, 卷号: 7, 期号: 5, 页码: 694-703
Hu, PG; Zhang, J; Yoon, MN; Qiao, XF; Zhang, X; Feng, W; Tan, PH; Zheng, W; Liu, JJ; Wang, XN; Idrobo, JC; Geohegan, DB; Xiao, K
收藏  |  浏览/下载:36/0  |  提交时间:2015/04/02
Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films 期刊论文
journal of applied physics, 2014, 卷号: 115, 期号: 16, 页码: 163704
Yang, J; Zhao, DG; Jiang, DS; Zhu, JJ; Yang, H; Chen, P; Liu, ZS; Le, LC; Li, XJ; He, XG; Liu, JP; Zhang, SM; Wang, H
收藏  |  浏览/下载:25/0  |  提交时间:2015/04/02
Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文
thin solid films, 2014, 卷号: 564, 页码: 135-139
He, XG; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Le, LC; Yang, J; Li, XJ; Zhang, SM; Zhu, JJ; Wang, H; Yang, H
收藏  |  浏览/下载:32/0  |  提交时间:2015/03/25
Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 6, 页码: 068801
Yang, J; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Li, L; Wu, LL; Le, LC; Li, XJ; He, XG; Wang, H; Zhu, JJ; Zhang, SM; Zhang, BS; Yang, H
收藏  |  浏览/下载:15/0  |  提交时间:2015/04/02
Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes 期刊论文
optics express, 2014, 卷号: 22, 期号: 10, 页码: 11392-11398
Le, LC; Zhao, DG; Jiang, DS; Yang, H; Chen, P; Liu, ZS; Yang, J; He, XG; Li, XJ; Liu, JP; Zhu, JJ; Zhang, SM
收藏  |  浏览/下载:21/0  |  提交时间:2015/03/25
Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth 期刊论文
ecs solid state letters, 2014, 卷号: 3, 期号: 7, 页码: q33-q35
Wen, JJ; Zhang, DL; Liu, Z; Zhou, TW; Xue, CL; Zuo, YH; Li, CB; Wang, QM; Cheng, BW
收藏  |  浏览/下载:16/0  |  提交时间:2015/05/11
Unintentionally doped semi-insulating GaN with a low dislocation density grown by metalorganic chemical vapor deposition 期刊论文
journal of vacuum science & technology b, 2014, 卷号: 32, 期号: 5, 页码: 051207
He, XG; Zhao, DG; Jiang, DS; Zhu, JJ; Chen, P; Liu, ZS; Le, LC; Yang, J; Li, XJ; Zhang, SM; Yang, H
收藏  |  浏览/下载:28/0  |  提交时间:2015/03/25


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