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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD 期刊论文 semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013 Wu CM; Zhang BP; Shang JZ; Cai LE; Zhang JY; Yu JZ; Wang QM 收藏  |  浏览/下载：64/3  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  MIRRORS  GAN  WAVELENGTHS   The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117801 Hu XL (Hu Xiao-Long); Zhang JY (Zhang Jiang-Yong); Shang JZ (Shang Jing-Zhi); Liu WJ (Liu Wen-Jie); Zhang BP (Zhang Bao-Ping) 收藏  |  浏览/下载：40/0  |  提交时间：2010/12/28 exciton-longitudinal-optical-phonon  InGaN/GaN single quantum well  GaN cap layer  Huang-Rhys factor   Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition 期刊论文 science china-technological sciences, 2010, 卷号: 53, 期号: 2, 页码: 313-316 Wu CM (Wu ChaoMin); Shang JZ (Shang JingZhi); Zhang BP (Zhang BaoPing); Zhang JY (Zhang JiangYong); Yu JZ (Yu JinZhong); Wang QM (Wang QiMing) 收藏  |  浏览/下载：73/2  |  提交时间：2010/05/04 MOCVD  DBR  high-reflectivity  nitride  SURFACE-EMITTING LASER   Growth behavior of AlInGaN films 会议论文 4th asian conference on crystal growth and crystal technology, sendai, japan, may 21-24, 2008 Shang JZ; Zhang BP; Mao MH; Cai LE; Zhang JY; Fang ZL; Liu BL; Yu JZ; Wang QM; Kusakabe K; Ohkawa K 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/09 Scanning electron microscope   Growth behavior of AlInGaN films 期刊论文 journal of crystal growth, 2009, 卷号: 311, 期号: 3, 页码: 474-477 Shang JZ; Zhang BP; Mao MH; Cai LE; Zhang JY; Fang ZL; Liu BL; Yu JZ; Wang QM; Kusakabe K; Ohkawa K 收藏  |  浏览/下载：216/66  |  提交时间：2010/03/08 Scanning electron microscope  Strain  X-ray diffraction  AlInGaN   Blue-violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors 期刊论文 journal of lightwave technology, 2009, 卷号: 27, 期号: 1-4, 页码: 55-59 Zhang JY; Cai LE; Zhang BP; Li SQ; Lin F; Shang JZ; Wang DX; Lin KC; Yu JZ; Wang QM 收藏  |  浏览/下载：169/53  |  提交时间：2010/03/08 Dielectric distributed Bragg reflector (DBR)  GaN  laser lift-off  vertical cavity surface-emitting laser (VCSEL)   Blue-green optically pumped GaN-based vertical cavity surface emitting laser 期刊论文 electronics letters, 2008, 卷号: 44, 期号: 16, 页码: 972-974 Cai LE; Zhang JY; Zhang BP; Li SQ; Wang DX; Shang JZ; Lin F; Lin KC; Yu JZ; Wang QM 收藏  |  浏览/下载：120/2  |  提交时间：2010/03/08 ROOM-TEMPERATURE   High Al-content AlInGaN epilayers with different thicknesses grown on GaN/sapphire templates 期刊论文 applied surface science, 2008, 卷号: 255, 期号: 5, 页码: 3350-3353 part 2 Shang JZ; Zhang BP; Wu CM; Cai LE; Zhang JY; Yu JZ; Wang QM 收藏  |  浏览/下载：35/0  |  提交时间：2010/03/08 XPS   Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 19, 页码: art. no. 191118 Zhang JY; Cai LE; Zhang BP; Li SQ; Lin F; Shang JZ; Wang DX; Lin KC; Yu JZ; Wang QM 收藏  |  浏览/下载：25/1  |  提交时间：2010/03/08 gallium compounds