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GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers* 期刊论文
CHINESE PHYSICS B, 2021, 卷号: 30, 期号: 9, 页码: 94204
作者:  Zhang, Yi;   Yang, Cheng-Ao;   Shang, Jin-Ming;   Chen, Yi-Hang;   Wang, Tian-Fang;   Zhang, Yu;   Xu, Ying-Qiang;   Liu, Bing;   Niu, Zhi-Chuan
收藏  |  浏览/下载：16/0  |  提交时间：2022/03/24
Mid-/Short-Wave dual-band infrared detector based on InAs/GaSb superlattice/GaSb bulk materials 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2021, 卷号: 40, 期号: 5, 页码: 569-575
作者:  Ma Xiao-Le;   Guo Jie;   Hao Rui-Ting;   Wei Guo-Shuai;   Wang Guo-Wei;   Xu Ying-Qiang;   Niu Zhi-Chuan
收藏  |  浏览/下载：16/0  |  提交时间：2022/03/28
Investigation of active-region doping on InAs/GaSb long wave infrared detectors 期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 4, 页码: 048502
作者:  Su-Ning Cui ;   Dong-Wei Jiang ;   Ju Sun ;   Qing-Xuan Jia ;   Nong Li ;   Xuan Zhang ;   Yong Li ;   Fa-Ran Chang ;   Guo-Wei Wang ;   Ying-Qiang Xu ;   Zhi-Chuan Niu
收藏  |  浏览/下载：32/0  |  提交时间：2021/12/17
Piezoelectric Tunnel FET With a Steep Slope 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2020, 卷号: 41, 期号: 6, 页码: 948-951
作者:  Yuxiong Long , Student Member,IEEE;   Jun Z. Huang;   Qianqian Huang,Member, IEEE;   Nuo Xu, Member, IEEE;   Xiangwei Jiang ,Member,IEEE;   Zhi-Chuan Niu ;   Ru Huang, Fellow, IEEE;   Shu-Shen Li
收藏  |  浏览/下载：35/0  |  提交时间：2021/06/17
High-performance midwavelength infrared detectors based on InAsSb nBn design 期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 6, 页码: 068501
作者:  Xuan Zhang ;   Qing-Xuan Jia ;   Ju Sun ;   Dong-Wei Jiang ;   Guo-Wei Wang ;   Ying-Qiang Xu ;   Zhi-Chuan Niu
收藏  |  浏览/下载：35/0  |  提交时间：2021/06/17
Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: 66, 期号: 11, 页码: 4982-4988
作者:  Yuxiong Long;   Jun Z. Huang;   Qianqian Huang;   Member,IEEE ;   Nuo Xu ;   Member,IEEE ;   Xiangwei Jiang ;   Member,IEEE ;   Zhi-Chuan Niu ;   David Esseni ;   Fellow,IEEE ;   Ru Huang;   Fellow,IEEE ;   Shu-Shen Li
收藏  |  浏览/下载：27/0  |  提交时间：2020/07/30
High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 1, 页码: 014208
作者:  Sheng-Wen Xie ;   Yu Zhang ;   Cheng-Ao Yang ;   Shu-Shan Huang ;   Ye Yuan ;   Yi Zhang ;   Jin-Ming Shang ;   Fu-Hui Shao ;   Ying-Qiang Xu ;   Hai-Qiao Ni ;   Zhi-Chuan Niu
收藏  |  浏览/下载：16/0  |  提交时间：2020/07/30
High quality 2-µm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chin. Phys. B, 2019, 卷号: 28, 期号: 3, 页码: 034202
作者:  Jin-Ming Shang ;   Jian Feng ;   Cheng-Ao Yang ;   Sheng-Wen Xie ;   Yi Zhang ;   Cun-Zhu Tong ;   Yu Zhang ;   Zhi-Chuan Niu
收藏  |  浏览/下载：16/0  |  提交时间：2020/07/30
Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-µm quantum dot lasers 期刊论文
Chin. Phys. B, 2019, 卷号: 28, 期号: 7, 页码: 078104
作者:  Hui-Ming Hao;  Xiang-Bin Su;  Jing Zhang;  Hai-Qiao Ni;  Zhi-Chuan Niu
收藏  |  浏览/下载：24/0  |  提交时间：2020/08/04
Effect of growth temperature of GaAs Sb 1− metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 11, 页码: 118102
作者:  Jing Zhang;  Hong-Liang Lv;  Hai-Qiao Ni;  Shi-Zheng Yang;  Xiao-Ran Cui;  Zhi-Chuan Niu;  Yi-Men Zhang and Yu-Ming Zhang
收藏  |  浏览/下载：22/0  |  提交时间：2020/07/30

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