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CORC

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Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth 期刊论文
crystengcomm, 2014, 卷号: 16, 期号: 21, 页码: 4562-4567
Yang, JK; Wei, TB; Huo, ZQ; Zhang, YH; Hu, Q; Wei, XC; Sun, BJ; Duan, RF; Wang, JX
收藏  |  浏览/下载：22/0  |  提交时间：2015/05/11
Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals 期刊论文
optics express, 2014, 卷号: 22, 期号: 13, 页码: a1093-a1100
Wei, TB; Huo, ZQ; Zhang, YH; Zheng, HY; Chen, Y; Yang, JK; Hu, Q; Duan, RF; Wang, JX; Zeng, YP; Li, JM
收藏  |  浏览/下载：20/0  |  提交时间：2015/03/25
Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres 期刊论文
journal of crystal growth, 2014, 卷号: 387, 页码: 101-105
Yang, JK; Wei, TB; Huo, ZQ; Hu, Q; Zhang, YH; Duan, RF; Wang, JX
收藏  |  浏览/下载：20/0  |  提交时间：2015/03/20
Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 9, 页码: 096802
Zhao, Y; Wang, G; Yang, HC; An, TL; Chen, MJ; Yu, F; Tao, L; Yang, JK; Wei, TB; Duan, RF; Sun, LF
收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25
Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres 期刊论文
materials letters, 2012, 卷号: 68, 页码: 327-330
Wei, TB; Chen, Y; Hu, Q; Yang, JK; Huo, ZQ; Duan, RF; Wang, JX; Zeng, YP; Li, JM; Liao, YX; Yin, FT
收藏  |  浏览/下载：20/0  |  提交时间：2013/03/17
Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 13, 页码: 131101
Ma J (Ma, Jun); Ji XL (Ji, Xiaoli); Wang GH (Wang, Guohong); Wei XC (Wei, Xuecheng); Lu HX (Lu, Hongxi); Yi XY (Yi, Xiaoyan); Duan RF (Duan, Ruifei); Wang JX (Wang, Junxi); Zeng YP (Zeng, Yiping); Li JM (Li, Jinmin); Yang FH (Yang, Fuhua); Wang C (Wang, Chao); Zou G (Zou, Gang)
收藏  |  浏览/下载：22/0  |  提交时间：2013/03/27
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05
Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文
rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
作者:  Wei TB;  Yang JK;  Duan RF
收藏  |  浏览/下载：58/10  |  提交时间：2011/07/05
Hydride Vapor Phase Epitaxy Growth of Semipolar, 10(1)over-bar(3)over-barGaN on Patterned m-Plane Sapphire 期刊论文
journal of the electrochemical society, 2010, 卷号: 157, 期号: 7, 页码: h721-h726
Wei TB (Wei T. B.); Hu Q (Hu Q.); Duan RF (Duan R. F.); Wei XC (Wei X. C.); Yang JK (Yang J. K.); Wang JX (Wang J. X.); Zeng YP (Zeng Y. P.); Wang GH (Wang G. H.); Li JM (Li J. M.)
收藏  |  浏览/下载：292/52  |  提交时间：2010/06/18
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
作者:  Wei TB;  Wei XC;  Duan RF
收藏  |  浏览/下载：84/6  |  提交时间：2010/03/08

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