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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 12, 页码: 127306 Le LC (Le Ling-Cong); Zhao DG (Zhao De-Gang); Wu LL (Wu Liang-Liang); Deng Y (Deng Yi); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Zhang BS (Zhang Bao-Shun); Yang H (Yang Hui) 收藏  |  浏览/下载：12/0  |  提交时间：2012/02/22 Electrically controllable RKKY interaction in semiconductor quantum wires 期刊论文 physical review b, 2010, 卷号: 81, 期号: 1, 页码: art. no. 113302 Zhu JJ (Zhu Jia-Ji); Chang K (Chang Kai); Liu RB (Liu Ren-Bao); Lin HQ (Lin Hai-Qing) 收藏  |  浏览/下载：64/0  |  提交时间：2010/04/28 MAGNETIC-FIELD  ELECTRON-GAS  EXCHANGE  SPINS  DOTS  MANIPULATION  COMPUTATION   Abnormal photoabsorption in high resistance GaN epilayer 期刊论文 acta physica sinica, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051 Liu WB (Liu Wen-Bao); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：30/0  |  提交时间：2010/12/27 GaN  exciton  photovoltaic spectroscopy  MSM  photoresponsivity   Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载：75/2  |  提交时间：2010/05/24 Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  REVERSE-BIAS LEAKAGE  MOLECULAR-BEAM EPITAXY  P-N-JUNCTIONS  POSITRON-ANNIHILATION  DIODES  FILMS   Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector 期刊论文 acta physica sinica, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957 Zhang S (Zhang Shuang); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Duan LH (Duan Li-Hong); Liu WB (Liu Wen-Bao); Jiang DS (Jiang De-Sheng); Yang H (Yang Hui) 收藏  |  浏览/下载：138/40  |  提交时间：2010/03/08 GaN   Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594 Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui) 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  HIGH-QUALITY GAN  ALN BUFFER LAYER  NUCLEATION LAYER  PHASE EPITAXY  EVOLUTION  DENSITY  SILICON  STRESS  SI