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Single Event Burnout Hardening of Enhancement Mode HEMTs With Double Field Plates 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 9, 页码: 2358-2366
作者:  Zhen, Zixin;   Feng, Chun;   Wang, Quan;   Niu, Di;   Wang, Xiaoliang;   Tan, Manqing
收藏  |  浏览/下载：9/0  |  提交时间：2022/03/28
Comparative Study of SiC Planar MOSFETs With Different p-Body Designs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 卷号: 67, 期号: 3, 页码: 1071-1076
作者:  Weijiang Ni ;   Xiaoliang Wang ;   Miaoling Xu ;   Mingshan Li;   Chun Feng;   Hongling Xiao;   Lijuan Jiang;   Wei Li;   Quan Wang
收藏  |  浏览/下载：4/0  |  提交时间：2021/11/05
Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 11, 页码: 111001
作者:  Di Niu;   Quan Wang;   Wei Li;   Changxi Chen;   Jiankai Xu;   Lijuan Jiang;   Chun Feng;   Hongling Xiao;   Qian Wang;   Xiangang Xu;   Xiaoliang Wang
收藏  |  浏览/下载：9/0  |  提交时间：2021/05/24
Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 卷号: 35, 期号: 9, 页码: 095024
作者:  Fen Guo;   Quan Wang;   Hongling Xiao;   Lijuan Jiang;   Wei Li;   Chun Feng;   Xiaoliang Wang;  Zhanguo Wang
收藏  |  浏览/下载：52/0  |  提交时间：2021/05/25
Three-dimensional metal–semiconductor–metal AlN deep-ultraviolet detector 期刊论文
OPTICS LETTERS, 2020, 卷号: 45, 期号: 12, 页码: 394338
作者:  Tao Li;   Linyun Long;   Zelin Hu;   Rongqiao Wan;   Xiaoliang Gong;   Lei Zhang;   Yongbo Yuan;   Jianchang Yan;   Wenhui Zhu;   Liancheng Wang;   Jinmin Li
收藏  |  浏览/下载：21/0  |  提交时间：2021/06/11
Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET 期刊论文
IEEE Electron Device Letters, 2019, 卷号: 40, 期号: 5, 页码: 698-701
作者:  Weijiang Ni ;   Xiaoliang Wang ;   Miaolin Xu;   Quan Wang ;   Chun Feng;   Honglin Xiao;   Lijuan Jiang;   Wei Li
收藏  |  浏览/下载：5/0  |  提交时间：2020/07/30
Roles of polarization effects in InGaN/GaN solar cells and comparison of p-i-n and n-i-p structures 期刊论文
OPTICS EXPRESS, 2018, 卷号: 26, 期号: 22, 页码: A946-A954
作者:  KUN WANG ;   QUAN WANG ;   JIAYAN CHU ;   HONGLING XIAO ;   XIAOLIANG WANG ;   ;   ZHANGUO WANG
收藏  |  浏览/下载：18/0  |  提交时间：2019/11/15
Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
作者:  Meilan Hao ;   Quan Wang ;   Lijuan Jiang ;   Chun Feng ;   Changxi Chen ;   Cuimei Wang ;   Hongling Xiao ;   Fengqi Liu ;   Xiangang Xu ;   Xiaoliang Wang ;   Zhanguo Wang
收藏  |  浏览/下载：34/0  |  提交时间：2019/11/15
Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance 期刊论文
Superlattices and Microstructures, 2017, 卷号: 109, 页码: 194-200
作者:  Shiming Liu;  Quan Wang;  Hongling Xiao;  Kun Wang;  Cuimei Wang
收藏  |  浏览/下载：34/0  |  提交时间：2018/05/23
Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs 期刊论文
semiconductor science and technology, 2016, 卷号: 31, 期号: 12, 页码: 125003
Wei Li; Quan Wang; Xiangmi Zhan; Junda Yan; Lijuan Jiang; Haibo Yin; Jiamin Gong; Xiaoliang Wang; Fengqi Liu; Baiquan Li; Zhanguo Wang
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10

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